Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-26T02:39:04.571Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Paramagnetic Resonance in Semiconductors

Published online by Cambridge University Press:  15 February 2011

James W. Corbett ,
Richard L. Kleinhenz  and
Neal D. Wilsey
James W. Corbett
Affiliation:
Institute for the Study of Defects in Solids, Physics Department, State University of New York at Albany, Albany, New York 12222
Richard L. Kleinhenz
Affiliation:
Institute for the Study of Defects in Solids, Physics Department, State University of New York at Albany, Albany, New York 12222
Neal D. Wilsey
Affiliation:
Institute for the Study of Defects in Solids, Physics Department, State University of New York at Albany, Albany, New York 12222
Get access

Abstract

The use of electron paramagnetic resonance (EPR) in the study of defects in semiconductors is briefly reviewed, including group IV (C-diamond, Si, Ge, SiC), III-V (AlSb, GaAs, GaSb, GaP, InAs, InP, InSb), II-VI (BaO, BaS, BeO, CaO, CaS, CaSe, CdO, CdS, CdSe, CdTe, MgO, SrO, SrS, ZnO, ZnS, ZnSe, ZnTe) and miscellaneous svstems. The identification of defects via EPR is described as is the exploitation of that identification as a tool in future studies. Particular attention is paid to Si, where is emerging an integrated panorama of identified defects ranging from point defects to aggregates through intermediate defect configurations (as discussed by Tan) to dislocations and stacking faults; EPR results in Si as a testing ground for the theory of shallow donors, in the understanding of diffusion at high temperatures and in the study of heat-treatment defects are discussed as examples of the use of EPR as a tool in defect studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 1
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Handbook of Chemistry and Physics (Chem. Rubber Co., Cleveland, 1971) 52nd edition, p. B245 et seq.Google Scholar
2. Feher, G., Phys. Rev. 114, 1219, 1245 (1959).Google Scholar
3. Hale, E. B. and Mieher, R. L., Phys. Letters A29, 30 (1969).Google Scholar
4. Hale, E. B. and Mieher, R. L., Phys. Rev. 184, 739 (1969).Google Scholar
5. Hale, E. B. and Mieher, R. L., Phys. Rev. 184, 751 (1969).Google Scholar
6. Hale, E. B. and Castner, T. G., Phys. Rev. B 1, 4763 (1970).Google Scholar
7. Ivey, J. L. and Mieher, R. L., Phys. Rev. B 11, 822 (1975).Google Scholar
8. Ivey, J. L. and Mieher, R. L., Phys. Rev. B 11, 849 (1975).Google Scholar
9. Kittel, C. and Mitchell, A. H., Phys. Rev. 96, 1488 (1954).Google Scholar
10. Kohn, W. and Luttinger, J. M., Phys. Rev. 97, 883 (1955).Google Scholar
11. Kohn, W. and Lottinger, J. M., Phys. Rev. 98, 915 (1955).Google Scholar
12. Kohn, W., Solid State Physics 5, 257 (1957).Google Scholar
13. Faulkner, R. A., Phys. Rev. 184, 713 (1969).Google Scholar
14. Hale, E. B., J. Phys. Chem. Solids 34, 621 (1973).Google Scholar
15. Pantelides, S. T. and Sah, C. T., Phys. Rev. B 10, 621,638 (1974).Google Scholar
16. Pantelides, S. T., Festkörperprobleme 15, 149 (1975).Google Scholar
17. Onffroy, J. R., Phys. Rev. B 17, 2062 (1978).Google Scholar
18. Mieher, R. L., Phys. Rev. B 17, 2069 (1978).Google Scholar
19. Feher, G., Hensel, J. C. and Gere, E. A., Phys. Rev. Letters 5, 309 (1960).CrossRefGoogle Scholar
20. Shimizu, T. and Tanaka, N., Phys. Letters A 45, 5 (1973).Google Scholar
21. Cherlow, J. M., Aggarwal, R. L. and Lax, B., Phys. Rev. B 7, 4547 (1973).Google Scholar
22. Neubrand, H., Phys. Stat. Sol. (b) 86, 269 (1978).CrossRefGoogle Scholar
23. Kohn, W. and Luttinger, J. M., Phys. Rev. 97, 869 (1955).Google Scholar
24. Kohn, W. and Schechter, D., Phys. Rev. 99, 1903 (1955).Google Scholar
25. Schechter, D., J. Phys. Chem. Solids 23, 237 (1962).Google Scholar
26. Baldereschi, A. and Lipari, N. O., Phys. Rev. B 9, 1525 (1974).Google Scholar
27. Ludwig, G. W., Phys. Rev. 137, A1520 (1965).Google Scholar
28. Wit, J. G. de, Sieverts, E. G. and Ammerlaan, C. A. J., Phys. Rev. B 14, 3494 (1976).Google Scholar
29. Sieverts, E. G., Ph.D. Thesis, University of Amsterdam, 1978.Google Scholar
30. Lee, T. F. and McGill, T. C., J. Phys. C: Solid State Phys. 6, 3438 (1973).Google Scholar
31. Ammerlaan, C. A. J. and Weigel, C. in: Lattice Defects in Semiconductors –1976, Urli, N. B. and Corbett, J. W., eds. (Inst. Phys., Bristol-London, 1977) pp. 448–457.Google Scholar
32. Ammerlaan, C. A. J. and Wolfrat, J. C., Phys. Stat. Sol. (b) 89, 85 (1978).CrossRefGoogle Scholar
33. Kaiser, W., Keck, P. H. and Lange, C. F., Phys. Rev. 101, 1264 (1956).Google Scholar
34. Hrostowski, H. J. and Alder, B. J., J. Chem. Phys. 33, 980 (1960).CrossRefGoogle Scholar
35. Corbett, J. W., McDonald, R. S. and Watkins, G. W., J. Phys. Chem. Solids 25, 873 (1964).Google Scholar
36. Bosomworth, D. R., Hayes, W., Spray, A. R. L. and Watkins, G. D., Proc. Roy. Soc. Lond. A 317, 133 (1970).Google Scholar
37. There are over one thousand references which should be cited for the information in Tables II, III and IV. Space does not permit our including these references. Questions about the origin of the information listed may be addressed directly to the authors.Google Scholar
38. Corbett, J. W., Surface Sci. 90, 205 (1979).Google Scholar
39. Slichter, C. P., Phys. Rev. 99, 479 (1955).Google Scholar
40. Feher, G., Fletcher, R. C. and Gere, E. A., Phys. Rev. 100, 1784 (1955).Google Scholar
41. Feher, G. in: Paramagnetic Resonance, Low, W., ed. (Academic Press, NY, 1963) Vol. 2, pp. 715–740.Google Scholar
42. Jerome, D. and Winter, J. M., Phys. Rev. 154, A1001 (1964).Google Scholar
43. Robert, C., C. R. Acad. Sc. Paris 260, 6337 (1965).Google Scholar
44. Maekawa, S. and Kinoshita, N., J. Phys. Soc. Japan 20, 1447 (1965).Google Scholar
45. Sugiura, Y., J. Phys. Soc. Japan 20, 2098 (1965).Google Scholar
46. Maekawa, S., J. Phys. Soc. Japan 21, 1221 (1966).Google Scholar
47. Maekawa, S., J. Phys. Soc. Japan, 21 Suppl., 574 (1966).Google Scholar
48. Kodera, H., J. Phys. Soc. Japan, 21 Suppl., 578 (1966).Google Scholar
49. Kumar, N. and Sinha, K. P., Zeit. F. Phys. 197, 26 (1966).Google Scholar
50. Cullis, P. R. and Marko, J. R., Phys. Rev. B 1, 632 (1970).Google Scholar
51. Hedgcock, F. T. and Randorf, T. W., Canad. J. Phys. 48, 2930 (1970).Google Scholar
52. Lèpine, D. J., Phys. Rev. B 2, 2429 (1970).Google Scholar
53. Quirt, J. D. and Marko, J. R., Phys. Rev. Letters 26, 318 (1971).Google Scholar
54. Ue, H. and Maekawa, S., Phys. Rev. 3, 4232 (1971).Google Scholar
55. Quirt, J. D. and Marko, J. R., Phys. Rev. B 5, 1716 (1972).Google Scholar
56. Toyoda, Y. and Hayashi, Y., J. Phys. Soc. Japan 33, 718 (1972).Google Scholar
57. Nagashima, H., Ochiai, Y. and Matsuura, E., Sol. State Comm. 11, 733 (1972).Google Scholar
58. Quirt, J. D. and Marko, J. R., Phys. Rev. B 7, 3842 (1973).Google Scholar
59. Rosso, M., J. Phys. Soc. Japan 38, 780 (1975).Google Scholar
60. Cullis, P. R. and Marko, J. R., Phys. Rev. B 11, 4184 (1975).Google Scholar
61. Morigaki, K., Kishimoto, N. and Lèpine, D. J., Sol. State Comm. 17, 1017 (1975).Google Scholar
62. Morigaki, K. and Rosso, M., J. de Phys. 36, 1131 (1975).Google Scholar
63. Ochiai, Y. and Matsuura, E., Phys. Stat. Sol. (a) 38, 243 (1976).Google Scholar
64. Kamimura, H. and Mott, N. F., J. Phys. Soc. Japan 40, 1351 (1976).Google Scholar
65. Kishimoto, N. and Morigaki, K., J. Phys. Soc. Japan 42, 137 (1977).Google Scholar
66. Toyoda, Y. and Morigaki, K., J. Phys. Soc. Japan 43, 118 (1977).Google Scholar
67. Toyoda, Y., Kishimoto, N., Murakami, K. and Morigaki, K., J. Phys. Soc. Japan 43, 114 (1977).Google Scholar
68. Ochiai, Y. and Matsuura, E., Phys. Stat. Sol. (a) 45, K101 (1978).Google Scholar
69. Mott, N. F., Advances in Phys. 21, 785 (1972).Google Scholar
70. Mott, N. F., Metal-Insulator Transitions (Taylor & Francis, London, 1974)Google Scholar
71. Watkins, G. D., J. Phys. Soc. Japan 18, Suppl. II, 22 (1963).Google Scholar
72. Watkins, G. D. in: Radiation Damage and Defects in Semiconductors, Whitehouse, J. E., ed. (Inst. of Phys. Bristol-London, 1973) pp. 228–237.Google Scholar
73. Watkins, G. D. and Corbett, J. W., Phys. Rev. 138, A543 (1965).Google Scholar
74. Corbett, J. W. and Watkins, G. D., Phys. Rev. 138, A555 (1965).Google Scholar
75. Watkins, G. D., Corbett, J. W. and Walker, R. M., J. Appl. Phys. 30, 1198 (1959).Google Scholar
76. Watkins, G. D. and Corbett, J. W., Disc. Faraday Soc. 31, 86 (1961).Google Scholar
77. Watkins, G. D. and Corbett, J. W., Phys. Rev. 134, A1359 (1964).CrossRefGoogle Scholar
78. Elkin, E. L. and Watkins, G. D., Phys. Rev. 174, 881 (1968).Google Scholar
79. Watkins, G. D., Phys. Rev. 155, 802 (1967).Google Scholar
80. See, for example, the discussion in refs. 81 and 82.Google Scholar
81. Corbett, J. W. and Bourgoin, J. C. in: Point Defects in Solids, Crawford, J. H. Jr. and Slifkin, L. M., eds. (Plenum, NY, 1975) Vol. 2, pp. 1–161.Google Scholar
82. Corbett, J. W., Karins, J. P. and Tan, T. Y., Proc. of the Int'l. Conf. on Ion Beam Modification of Materials–80, in press.Google Scholar
83. Lee, Y. H., Gerasimenko, N. N. and Corbett, J. W., Phys. Rev. B 14 4506 (1976).Google Scholar
84. Fair, R. B. in: Processing Technologies, Kahng, D., ed. (Academic Press, NY, 1981) in press.Google Scholar
85. Van Vechten, J. A., Phys. Rev. B 17, 3197 (1978).Google Scholar
86. Van Vechten, J. A. and Thurmond, C. D., Phys. Rev. B 14, 3551 (1976).Google Scholar
87. Bourgoin, J. C. and Lannoo, M., Rad. Effects 46, 157 (1980).Google Scholar
88. Seeger, A., Frank, W. and Gösele, U. in: Defects and Radiation Effects in Semiconductors, 1978, Albany, J. H., ed. (Inst. of Phys., Bristol-London, 1979) pp. 148–170.Google Scholar
89. Peart, R. F., Phys. Stat. Sol. 15, K119 (1966).CrossRefGoogle Scholar
90. Ghoshtagore, R. N., Phys. Rev. Letters 16, 890 (1966).Google Scholar
91. Kendall, B. L. and DeVries, D. B. in: Semiconductor Silicon, Haberecht, R. R., ed. (Electroehem. Soc., NY, 1969) pp. 358–421.Google Scholar
92. Masters, B. J., Sol. State Comm. 9, 283 (1971).Google Scholar
93. Seeger, A. and Swanson, M. L. in: Lattice Defects in Semiconductors, Hasiguti, R. R., ed. (Univ. of Tokyo Press, Tokyo, 1966) pp. 93–130.Google Scholar
94. Seeger, A. and Chik, K. P., Phys. Stat. Solidi 29, 455 (1968).Google Scholar
95. Seeger, A. in: Radiation Effects in Semiconductors, Corbett, J. W. and Watkins, G. D. (Gordon and Breach, NY, 1971) pp. 29–38.Google Scholar
96. Frank, W. in: Lattice Defects in Semiconductors, 1974, Huntley, F. A. (Inst. of Phys., Bristol-London, 1975) pp. 23–48.Google Scholar
97. Lee, Y. H., Kleinhenz, R. L. and Corbett, J. W. in: Defects and Radiation Effects in Semiconductors, 1978, Albany, J. H., ed. (Inst. of Phys., Bristol-London, 1979) pp. 521–531.Google Scholar
98. Baraff, G. A., Kane, E. O. and Schlüter, M., Phy. Rev. Letters 43, 956 (1979).Google Scholar
99. Watkins, G. D. and Troxell, J. R., Phys. Rev. Letters 44, 593 (1980).Google Scholar
100. Lee, Y. H. and Corbett, J. W., Phys. Rev. B 9, 4351 (1974).Google Scholar
101. Jung, W. and Newell, G. S., Phys. Rev. 132, 648 (1963).Google Scholar
102. Brower, K. L. in: Radiation Effects in Semiconductors, Corbett, J. W. and Watkins, G. D., eds. (Gordon and Breach, NY, 1971) pp. 189–195.Google Scholar
103. Nisenoff, M. and Fan, H. Y., Phys. Rev. 128, 1605 (1962).Google Scholar
104. Lee, Y. H. and Corbett, J. W., Phys. Rev. B 8, 2810 (1973).Google Scholar
105. Watkins, G. D., Messmer, R. P., Weigel, C., Peak, D. and Corbett, J. W., Phys. Rev. Letters 27, 1573 (1971).Google Scholar
106. Weigel, C., Peak, D., Corbett, J. W., Watkins, G. D. and Messmer, R. P., Phys. Rev. B 8, 2906 (1973).Google Scholar
107. Weigel, C. and Corbett, J. W., Z. Physik B 23, 233 (1976).Google Scholar
108. Watkins, G. D. and Brower, K. L., Phys. Rev. Letters 36, 1329 (1976).Google Scholar
109. Mazey, D. J., Barnes, R. S. and Nelson, R. S. in: Proc. 6th Int'l Conf. on Electron Microscopy, Uyeta, R., ed. (Maruzen Co. Ltd.,Tokyo, 1966) pp. 363–368.Google Scholar
110. Davidson, S. M. and Booker, G. R., Rad. Effects 6, 33 (1970).Google Scholar
111. Bicknell, R. W., Proc. Roy. Soc. A 31, 75 (1969).Google Scholar
112. Chadderton, L. T. and Eisen, F. H., Rad. Effects 7, 129 (1971).Google Scholar
113. Madden, P. K. and Davidson, S. M., Rad. Effects 14, 271 (1972).Google Scholar
114. Matthews, M. D. and Ashby, S. J., Phil. Mag. 27, 1313 (1973).Google Scholar
115. Wu, W. K. and Washburn, J., J. Appl. Phys. 48, 3742 (1977).Google Scholar
116. Seshan, K. and Washburn, J., Rad. Effects 14, 267 (1972).Google Scholar
117. Nes, E. and Washburn, J., J. Appl. Phys. 42, 3559 (1972).Google Scholar
118. Aseev, A. L., Bolotov, V. V., Smirnov, L. S. and Stenin, S. I., Sov. Phys. Semicond. 13, 764 (1979).Google Scholar
119. Salisbury, I. G. and Loretto, M. H., Phil. Mag. A 39, 317 (1979).Google Scholar
120. Ferreira-Lima, C. A. and Howie, A., Phil. Mag. 34, 1057 (1976).Google Scholar
121. Tan, Teh-Yu, Phil. Mag., in press.Google Scholar
122. Kaiser, W., Frisch, H. L. and Reiss, H., Phys. Rev. 112, 1546 (1958).Google Scholar
123. Muller, S. H., Sprenger, M., Sieverts, E. G. and Ammerlaan, C. A. J., Sol. State Comm. 25, 987 (1978).Google Scholar
124. Muller, S. H., Sieverts, E. G. and Ammerlaan, C. A. J., to be published.Google Scholar
125. Lee, Y. H., Corbett, J. W. and Brower, K. L., Phys. Stat. Sol. A 41, 637 (1977).Google Scholar