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C11b-C40 Transformation-Induced 1/4<111> Faults in Mosi2

Published online by Cambridge University Press:  25 February 2011

B.K. Kad ,
K.S. Vecchio ,
B.P. Bewlay  and
R.J. Asaro
B.K. Kad
Affiliation:
Department of Applied Mechanics & Engineering Sciences, University of California-San Diego, LaJolla, CA 92093-0411.
K.S. Vecchio
Affiliation:
Department of Applied Mechanics & Engineering Sciences, University of California-San Diego, LaJolla, CA 92093-0411.
B.P. Bewlay
Affiliation:
GE Corporate Research & Development, Schenectady, NY 12301.
R.J. Asaro
Affiliation:
Department of Applied Mechanics & Engineering Sciences, University of California-San Diego, LaJolla, CA 92093-0411.
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Abstract

Previous experimental evidence for the transformation of MoSi2 from the high temperature C40 structure to the low temperature C11b structure has been re-examined such that the fault character and the existence of the C40 structure is now questioned. New observations of faults in single crystals prepared over a range of growth rates from 1cm/hr to 30cm/hr are presented. Transformation-induced stacking faults, which were previously described as 1/4<111> lying on {110), have been re-identified as 1/6[001] condensation faults on (001). These faults were probably produced by silicon loss during crystal growth. The contribution that these faults may make to macroscopic strain under the action of diffusion-assisted mechanisms at elevated temperatures is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 322: Symposium F – High-Temperature Silicides and Refractory Alloys , 1993 , 49
Copyright
Copyright © Materials Research Society 1994

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References

1. Petrovic, J.J., MRS Bulletin 13(6), 35–40 (1993).Google Scholar
2. Meschter, P.J. and Schwartz, D.S., JOM 41 (11), 52–55 (1989).Google Scholar
3. Gibala, R., Gosh, A.K., Aken, D.C. Van, Srolovitz, D.J., Basu, A., Mason, D.P. and Wang, W., Mat. Sci. and Eng. A155, 147–152 (1992).Google Scholar
4. Umakoshl, Y., Sakagami, T., Yamane, T. and Hirano, T., Phil. Mag. Lett. 59, 159–164 (1989).CrossRefGoogle Scholar
5. Umakoshi, Y-., Sakagami, T., Hirano, T. and Yamane, T., Acta. Met. 38, 909–915 (1990).Google Scholar
6. Massalski, T. B. (ed.), 1990, Binary Alloy Phase Diagrams, American Society for Metals, Metals Park, OH.Google Scholar
7. Boettinger, W.J., Perepezko, J.H. and Frankwicz, P.S., Mat. Sci. and Eng. A155, 33–44 (1992).Google Scholar
8. Kad, B.K., Vecchio, K.S. and Asaro, R.J., MRS Symp. Proc. 288, 1123–1128 (1993).Google Scholar
9. Evans, D.J., Court, S.A., Hazzledine, P.M. and Fraser, H.L., Phil. Mag. Lett. 67, 331–341 (1993).Google Scholar
10. Thomas, O., Senateur, J.P. and Madar, R., Solid State Coin. 55 (7), 629–633 (1985).Google Scholar
11. Kimura, K., Nakmura, M. and Hirano, T., Mat. Sci and Eng. 25, 2487 (1990).Google Scholar
12. Lograsso, T. A., Mat. Sci and Eng. A155, 115–119 (1992).Google Scholar
13. Groves, G.W. and Kelly, A., Phil. Mag. 19, 977 (1969).Google Scholar