Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-27T04:14:04.727Z Has data issue: false hasContentIssue false
  • English
  • Français

Degradation Mechanism in GaAs Led

Published online by Cambridge University Press:  16 February 2011

Zhou Jicheng ,
Fu Zhiping ,
Zhan Qianbao  and
Feng Shuifu
Zhou Jicheng
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Fu Zhiping
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Zhan Qianbao
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Feng Shuifu
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Get access

Abstract

A series of experiments have been performed to verify the nature of hole trap A and B in GaAs proposed by Zou and revised by Zhou (one of the present authors). The relative concentration of these two Craps is responsible for the degradation behavior of the diodes. Accordingly, the degradation mechanism in GaAs LED can be reasonably deduced based on thermodynamic consideration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 145
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wang, Z.-G., Ledebo, L.-Å. and Grimeiss, H.G., J. Phys. C 17, 479 (1987).Google Scholar
2. Prints, V.Ya, Khairi, E. Kh., Samoilov, V.A. and Yu. Bolkhovityanov, B., Phys. Tech. Semiconductors 20, 1392 (1986).Google Scholar
3. Zou, Y., Presented at the National Conference on Microwave Technology, Hebei, China, (1974), in Chinese.Google Scholar
4. zou, Y., zhou, J., Lu, Y., Wang, G., Hu, B., Li, C., Li, L., Shao, J. and Sheng, C., Proceedings of the 13th International Conference on Defects in Semiconductors (Metallurgical-Society, Coronado, 1984), p.1021; J. Electron. Mater. 14a, 1021 (1985).Google Scholar
5. Zhou, J., Lu, Y., Li, L., Lu, B. and Zhang, J., Mater. Letters 5, 479 (1987).Google Scholar
6. Zhou, J., Li, L., Liu, M., Lu, B. and Zhang, J., Mater. Letters 6, 247 (1988).10.1016/0167-577X(88)90150-4Google Scholar
7. Zhou, J., Luo, Y., Lu, B. and Zhan, Q., Mater. Letters 7, 391 (1989).10.1016/0167-577X(89)90056-6Google Scholar
8. Lang, D.V. and Logan, R.A., J. Electron. Mater. 4, 1053 (1975).10.1007/BF02660189Google Scholar
9. Feng, S. and Zhou, J., Presented at the National Conference on Microwave and Photo-electrical Devices, Chongqing, China (1985), in Chinese.Google Scholar
10. Yakusheva, N.A., Prints, V.Ya and Bolkhovityanov, Yu.B., Phys. Stat. Solidi (a) 95, K43 (1986).10.1002/pssa.2210950155Google Scholar
11. Kondo, K., Isozumi, S., Yamakoshi, S. and Kotani, T., International Conference on GaAs and Related Compounds, Inst. Phys. Conf. Ser. No.63, 227 (1981).Google Scholar
12. Li, L., Zhou, J., Lu, B. and Wu, Z., To be published.Google Scholar