Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-26T09:22:16.687Z Has data issue: false hasContentIssue false
  • English
  • Français

The Interplay of Thermo-Mechanical Properties in the Growth and Processing of III-V Materials

Published online by Cambridge University Press:  26 February 2011

A. S. Jordan  and
V. Swaminathan
A. S. Jordan
Affiliation:
Murray Hill, NJ 07974
V. Swaminathan
Affiliation:
Breinigsville, PA 18031
Get access

Abstract

The thermo-mechanical properties of III-V semiconductors, in general, and of GaAs and InP in particular, are reviewed. They play an important role in many aspects of semiconductor device fabrication starting from the growth of bulk crystals. Dislocation generation in GaAs and InP are discussed with the emphasis on the theoretical and experimental aspects of reducing the dislocation density in these materials. Such mechanical properties as glide systems, critical resolved shear stress and impurity hardening are covered. The effects of dislocations on device performance are illustrated with examples from photonic and electronic devices. Finally, the effect of thermomechanical stresses in the degradation and reliability of GaAs/AlGaAs and InP/InGaAsP based opto-electronic devices is considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 117
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Swarninathan, V. and Copley, S. M., J. Am. Ceram. Soc. 58, 482 (1975).Google Scholar
2. Brown, G. T., Cockayne, B. and MacEwan, W. R., J. Mat. Sci. 15, 1469 (1980).Google Scholar
3. Laister, D. and Jenkins, G. M., J. Mat. Science, 8, 1218 (1973).Google Scholar
4. Brasen, D. and Bonner, W. A., J. Mat. Science, 61, 167 (1983).Google Scholar
5. Brown, G. T., Cockayne, B., MacEwan, W. R. and Ashen, D. J., J. Mat. Sci. Lett. 2, 667 (1983).Google Scholar
6. Muller, G., Rupp, R., Voelkl, J., Wolf, H. and Blum, W., J. Cryst. Growth, 71, 771 (1985).Google Scholar
7. Alexander, H. and Haasen, p., in Solid State Phys., eds. Seitz, F. and Turnbull, D., Vol. 22, (Academic, New York, 1968), p. 27.Google Scholar
8. Schmid, E. and Boas, W. “Kristallplastizitat.” (1935), English edition, “Plasticity of Crystals”. (F. A. Hughes and Company, Ltd., London, 1950).Google Scholar
9. Guruswamy, S., Rai, R. S., Faber, K. T. and Hirth, J. P., J. Appl. Phys. 62, 4130 (1987).Google Scholar
10. Guruswamy, S., Rai, R. S., Faber, K. T., Hirth, J. P., Clemans, J.E., McGuigan, S., Thomas, R.N., and Mitchel, W., J. Appl. Phys. 65, 2508 (1989).Google Scholar
11. Sazhin, N. P., Milvidskii, M. G., Osvenskii, V. B. and 0. Stolyarov, G., Soy. Phys. Solis State 8, 1223 (1966).Google Scholar
12. Osvenskii, V. B., Stolyarov, G. G. and Milvidskii, M. G., Sov. Phys. Solid State 10, 2540 (1969).Google Scholar
13. Ninomiya, T., J. de Physique, 40, Colloq. C6, 143 (1979).Google Scholar
14. Brown, G. T., Cockayne, B. and MacEwan, W. R., J. Cryst. Growth, 51, 369 (1981).Google Scholar
15. Volkl, J., Muller, G. and Blum, W., J. Cryst. Growth, 83,383 (1987).Google Scholar
16. Ehrenreich, H. and Hirth, J. P., Appl. Phys. Lett. 46, 668 (1985).Google Scholar
17. Mutaftschiev, B., in Dislocation in Solids, ed. Nabarro, F. R. N., Vol. 5, (North-Holland, Amsterdam, 1980), p. 59.Google Scholar
18. Brice, J. C. and King, G. D., Nature 209, 1346 (1966).Google Scholar
19. Brice, J. C., J. Cryst. Growth 7, 9 (1970).Google Scholar
20. Holmes, D. E., Chen, R. T., Elliot, K. R. and Kirkpatrick, C. G., Appl. Phys. Lett. 40, 46 (1982).Google Scholar
21. Ta, L. B., Hobgood, H. M., Rohatgi, A. and Thomas, R. N., J. Appl. Phys. 53, 5771 (1982).Google Scholar
22. Lagowski, J., Gatos, H. C., Aoyama, T. and Lin, D. C., Appl. Phys. Lett. 45, 680 (1984).Google Scholar
23. Jordan, A. S., Caruso, R. and VonNeida, A. R., Bell Syst. Tech. J. 59, 593 (1980).Google Scholar
24. Gault, W. A., Monberg, E. M. and Clemans, J. E., J. Cryst. Growth 74, 491 (1986); see also J. E. Clemens, W. A. Gault, and E. M. Monberg, AT&T Tech. J., 65,86 (1986).Google Scholar
25. Jordan, A. S. and Monberg, E. M., unpublished.Google Scholar
26. Roedel, R. J., A. R. Von Neida, Caruso, R. and Dawson, L. R., J. Electrochem. Soc. 126, 637 (1979).Google Scholar
27. DeLoach, B. C., Hakki, B. W., Hartman, R. L. and D'Asaro, L. A., Proc. IEEE 61, 1042 (1973).Google Scholar
28. Petroff, P. M. and Hartman, R. L., Appl. Phys. Lett. 23, 469 (1973).Google Scholar
29 Anthony, P. J., Hartman, R. L., Schumaker, N. E. and Wagner, W. R., J. Appl. Phys. 53,756 (1982).Google Scholar
30. Nanishi, Y., Ishida, S., Honda, T., Yamazaki, H. and Miyazawa, S., Japan J. Appl. Phys. 21, L335 (1982).Google Scholar
31. Miyazawa, S. and Nanishi, Y., Japan J. Appl. Phys. 22 Suppl. 22–1, 419 (1983).Google Scholar
32. Nanishi, Y., Ishida, S. and Miyazawa, Y., Japan J. Appl. Phys. 22, L54 (1983).Google Scholar
33. Olsen, G. H. and Ettenberg, M., J. Appl. Phys. 48, 2543 (1977).Google Scholar
34. Wakefield, B., J. Appl. Phys. 50, 7914 (1979).Google Scholar
35. Robertson, M. J., Wakefield, B. and Hutchinson, P., J. Appl. Phys. 52, 4462 (1981).Google Scholar
36. Swaminathan, V., Lopata, J. and Lee, J. W., Mat. Res. Soc. Symp. Proc. 77, 779 (1987).Google Scholar
37. Hartman, R. L. and Hartman, A. R., Appl. Phys. Lett. 23, 147 (1973).Google Scholar
38. Swaminathan, V., Wagner, W. R., Anthony, P. J., Henein, G. and Koszi, L. A., J. Appl. Phys. 54, 3763 (1983).Google Scholar
39. Elliot, C. R., Regnault, J. C. and Wakefield, B., Inst. Phys. Conf. Ser. 65, 553 (1983).Google Scholar
40. Thompson, A., IEEE J. Quant. Elect. QE-15, 11(1979).Google Scholar
41. Peek, J.A.F., IEEE J. Quant. Elect. QE-17, 781(1981).Google Scholar
42. Swaminathan, V., Parayanthal, P. and Hartman, R. L., Appl. Phys. Lett. 52, 1461 (1988).Google Scholar
43. Koyama, H., Nishioka, T., Isshiki, K., Namizaki, H., and Kawazu, S., Appl. Phys. Lett. 43, 733 (1983).Google Scholar
44. Chin, A. K., DiGiuseppe, M. A. and Bonner, W. A., Mat. Lett. 1, 19 (1982).Google Scholar
45. Swaminahan, V., Koszi, L. A. and Focht, M. W., Mat. Res. Soc. Symp. Proc. 184, 199 (1990).Google Scholar
46. Ikeda, M., 0. Ueda, Komiya, S. and Umebu, I., J. Appl. Phys. 58, 2448 (1985).Google Scholar