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The Effect of Deposition Temperature on the Microstructure of Lpcvd Polysilicon Films

Published online by Cambridge University Press:  22 February 2011

J. Hangas
Affiliation:
Ford Motor Company, Scientific Research Laboratory, MD3061 SRL, PO Box 2053, Dearborn, MI 48121–2053
D. R. Liu
Affiliation:
Ford Motor Company, Scientific Research Laboratory, MD3061 SRL, PO Box 2053, Dearborn, MI 48121–2053
D. G. Oei
Affiliation:
Ford Motor Company, Scientific Research Laboratory, MD3061 SRL, PO Box 2053, Dearborn, MI 48121–2053
S. L. McCarthy
Affiliation:
Ford Motor Company, Scientific Research Laboratory, MD3061 SRL, PO Box 2053, Dearborn, MI 48121–2053
C. Peters
Affiliation:
Ford Motor Company, Scientific Research Laboratory, MD3061 SRL, PO Box 2053, Dearborn, MI 48121–2053
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Abstract

The microstructure, of unannealed and annealed polysilicon films was studied using TEM and XRD. The LPCVD films were grown at 600°C and 620°C with 320 mTorr of silane, and at 580°C with 220 mTorr of silane. The substrates were [001] Si with a thin oxide film. The stress state of the films changed from compressive at 580°C and 620°C, to tensile in a narrow region around 600°C. The same materials were annealed at 1100°C. The unannealed films vary from partially amorphous at 580°C, where the slowest growth rate was observed, to randomly oriented and equiaxed at 600°C, to columnar and highly oriented at 620°C. The grains in the 620°C material have a high stacking fault and polytype density, and it was proposed that these occurred on growth, and not from dislocation motion. The grain size increased from 40–250run to 100–300 nm in the 600°C samples when annealed at 1100°C, and the density of twins and stacking faults was reduced. The hexagonal phase was observed only in unannealed materials in SAED and as broad “wings” at the base of the llld.c (diamond cubic) peak in XRD. Within the limits of SAED, no change in lattice parameter of the hexagonal phase was observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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