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Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source

Published online by Cambridge University Press:  01 February 2011

Rob Armitage ,
Qing Yang ,
Henning Feick ,
Yeonjoon Park  and
Eicke R. Weber
Rob Armitage
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Qing Yang
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Henning Feick
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Yeonjoon Park
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Eicke R. Weber
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (<5×1020 cm-3) were actually ntype rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow (∼6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

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