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Cathodoluminescence Studies of Si-Sio2 Interfaces Prepared by Plasma-Assisted Oxidation and Subjected to Post-Oxidation Rapid Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

J. Schafer ,
A. P. Young ,
L. J. Brillson ,
H. Niimi  and
G. Lucovsky
J. Schafer
Affiliation:
Center for Materials Research, Department of Physics
A. P. Young
Affiliation:
Department of Electrical Engineering, Ohio State University, Columbus, OH 43210
L. J. Brillson
Affiliation:
Center for Materials Research, Department of Physics Department of Electrical Engineering, Ohio State University, Columbus, OH 43210
H. Niimi
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
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Abstract

We have used low energy cathodolumrdinescence spectroscopy (CLS) to characterize defects at ultrathin (50 Å) silicon dioxide films, prepared on Si substrates by low-temperature plasma deposition. Variable-depth excitation with different electron injection energies provided a clear distinction between deep levels localized within the films versus at their interfaces. Defect bands are evident at 0.8 eV and 1.9 eV, characteristic of an amorphous, silicon-rich local bonding environment. Closer to the film surface, CLS reveals a defect at 2.7 eV indicative of oxygen vacancies in stoichiometric SiO2. The effect of hydrogenation at 400°C, rapid thermal annealing at 900°C, and especially the combination of both processing steps is shown to reduce the density of these defects dramatically.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 151
Copyright
Copyright © Materials Research Society 1998

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