Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-26T00:20:11.623Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of XeCl Excimer-Laser Annealed Insulator

Published online by Cambridge University Press:  10 February 2011

Keun-Ho Jang ,
Hong-Seok Choi ,
Jae-Hong Jun ,
Jhun-Suk Yoo  and
Minkoo Han
Keun-Ho Jang
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Hong-Seok Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Jae-Hong Jun
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Jhun-Suk Yoo
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Minkoo Han
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Get access

Abstract

The laser annealing effects on the TEOS (Tetra-Ethyl-Ortho-Silicate) oxide of MOS (AI/TEOS/n+ Silicon ) structures was investigated with different initial oxide conditions, such as breakdown field. The breakdown field increased upto the 170 mJ/cm2 with increasing laser energy density and decreased at 220 mJ/cm2. It is considered that the increase of breakdown field is originated from the restore of strains which exist mainly at the metal/oxide interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 105
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shimizu, K., Sugiura, O., and Matsumura, M., Jpn. J. Appl. Phys. 29, L1775 (1990).Google Scholar
2. Slaoui, A., Foulon, F., and Siffert, P., J. Appl. Phys. 67, 6197 (1990).Google Scholar
3. Brodie, I., and Richard, P., Proceedings of the IEEE 82, 1006 (1994).Google Scholar