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NP Heterojunction Porous Silicon Light-Emitting Diode

Published online by Cambridge University Press:  15 February 2011

Nader M. Kalkhoran ,
F. Namavar  and
H. P. Maruska
Nader M. Kalkhoran
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
F. Namavar
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
H. P. Maruska
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
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Abstract

We report the first demonstration of visible light emission from an all solid-state n-p heterojunction diode based on porous silicon. The p-type silicon was electrochemically etched in a hydrofluoric acid solution to form a porous silicon region; the n-p heterojunction diode was fabricated by depositing a wide bandgap n-type semiconductor, indium-tin-oxide (ITO), onto the surface of the porous silicon. With positive bias applied, electroluminescence was observed with a relatively narrow peak at about 580 nm. The device showed strong rectifying properties and no light emission was observed under reverse bias condition. Photoluminescence in the red, orange, yellow, and green was also observed in separate sample preparations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 89
Copyright
Copyright © Materials Research Society 1992

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References

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