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Indium in silicon: a study on diffusion and electrical activation.

Published online by Cambridge University Press:  01 February 2011

S. Scalese ,
A. La Magna ,
G. Mannino ,
V. Privitera ,
M. Bersani ,
D. Giubertoni ,
S. Solmi  and
P. Pichler
S. Scalese
Affiliation:
CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania, Italy
A. La Magna
Affiliation:
CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania, Italy
G. Mannino
Affiliation:
CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania, Italy
V. Privitera
Affiliation:
CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania, Italy
M. Bersani
Affiliation:
ITC-irst, via Sommarive 18, 38050 Povo (Trento), Italy
D. Giubertoni
Affiliation:
ITC-irst, via Sommarive 18, 38050 Povo (Trento), Italy
S. Solmi
Affiliation:
CNR-IMM Sezione Bologna, via Gobetti, 101, 40129 Bologna, Italy
P. Pichler
Affiliation:
Fraunhofer-Institute fuer Integrierte Schaltungen, Bauelementetechnologie, Schottkystrasse 10, 91058 Erlangen, Germany
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Abstract

In this work we investigate the diffusion and the electrical activation of In atoms implanted in silicon with different energies, in the range 80-360 keV, after rapid thermal processing. Our investigation shows a clear dependence of In out-diffusion and electrical activation on the implant depth, being the electrically active fraction higher with increasing the implant energy for a fixed dose. The data are explained considering the balance between the local In concentration and the C background inside the silicon substrate and the formation of C-In complexes, which play a role in the enhanced electrical activation due to the shallower level they introduce into the Si band gap (Ev+0.111 eV), with respect to the rather deep level (Ev+0.156 eV) of In alone. In and C co-implantation has also been studied within this work, in order to confirm the key role of C in the increase of the electrical activation. A large increase of the electrical activation has been detected in the co-implanted samples, up to a factor of about 8 after annealing at 900°C. However, C precipitation occurs at 1100°C, with dramatic effects on the carrier concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D6.13
Copyright
Copyright © Materials Research Society 2003

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