Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-27T04:16:18.495Z Has data issue: false hasContentIssue false
  • English
  • Français

Cluster Size Measurements in an Ionized Cluster Beam System

Published online by Cambridge University Press:  25 February 2011

D. E. Turner ,
K. M. Lakin  and
H. R. Shanks
D. E. Turner
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011.
K. M. Lakin
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011.
H. R. Shanks
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011.
Get access

Abstract

Ionized Cluster Beam (ICB) deposition has received considerable attention in recent years because of its potential application to low temperature semiconductor and metal film growth. To better understand this deposition process, however, it is necessary to determine the properties of the cluster source and the cluster size distribution obtained. This paper discusses the design of a time-of-flight mass spectrometer with single atom resolution for the measurement of cluster size in a conventional ICB deposition system. Results have been obtained for silver and germanium deposition. In both cases most of the clusters have been found to consist of less than 35 atoms. With the high resolution spectrometer it has been possible to show that certain cluster sizes are more stable than others.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 125
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Usui, H., Ueda, A., Yamada, I., and Takagi, T., Proc. 9th Symp. on ISIAT 85, 39 (1985).Google Scholar
2. Knaur, W., J. Appl. Phys. 62 (3), 841 (1 August 1987).10.1063/1.339688Google Scholar
3. Pruett, J.G., Windischmann, H., Nicholas, M.L., and Lampard, P.S., J. Appl. Phys. 64 (5), 2271 (1 September 1988).Google Scholar
4. de Heer, W.A., Knight, W.D., Chou, M.Y., and Cohen, M.L., Solid State Physics, Volume 40 (Academic Press, Inc., 1987), p. 137.Google Scholar
5. Ghatak, S.K. and Bennemann, K.H., J. Phys. Chem. 91, 2457 (1987).Google Scholar
6. Cohen, M.L., Chou, M.Y., Knight, W.D., and de Heer, W.A., J. Phys. Chem. 91, 3141 (1987).Google Scholar