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Ion Irradiation of GeSi/Si Strained-Layer Heterostructures

Published online by Cambridge University Press:  15 February 2011

J.M. Glaskol ,
R. G. Elliman ,
J. Zou ,
D.J.H. Cockayne  and
J. D. Fitz Gerald
J.M. Glaskol
Affiliation:
Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia Now at the Materials Science and Engineering Department, North Carolina State University, Raleigh, NC 27695, USA
R. G. Elliman
Affiliation:
Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia
J. Zou
Affiliation:
Australian Key Centre for Microscopy and Microanalysis and Electron Microscope Unit, University of Sydney, Sydney, NSW 2006, Australia
D.J.H. Cockayne
Affiliation:
Australian Key Centre for Microscopy and Microanalysis and Electron Microscope Unit, University of Sydney, Sydney, NSW 2006, Australia
J. D. Fitz Gerald
Affiliation:
Petrophysics Group, Research School of Earth Sciences, Australian National University, Canberra, ACT 0200, Australia
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Abstract

The strain in GeSi/Si strained layer heterostructures is studied as a function of ion-irradiation and thermal annealing conditions and correlated with the defect microstructure in the GeSi alloy layer. For room temperature irradiation, compressive strain within the alloy layer increases with increasing ion fluence for both low (projected range of ions within the alloy layer) and high energy (projected range of the ions greater than alloy thickness) irradiation. In contrast, elevated temperature irradiation results in an increase in strain for low-energy irradiation, but a decrease for high-energy irradiation. For example, strain relaxation is observed in layers irradiated with I MeV 28Si+ at 253 °C. During subsequent annealing to 750 °C, the strain is partially recovered but relaxes again at temperatures > 750°C. This behavior is shown to be consistent with the evolution of intrinsic (vacancy-type) defects within the alloy layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 55
Copyright
Copyright © Materials Research Society 1999

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