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Light-induced degradation in p-type gallium co-doped solar grade multicrystalline silicon wafers and solar cells

Published online by Cambridge University Press:  16 December 2013

Xianpei Ren ,
Lihan Cai ,
Baodian Fan ,
Haoran Cheng ,
Songsheng Zheng  and
Chao Chen
Xianpei Ren
Affiliation:
School of Energy Research Xiamen University, 361005 Xiamen, P.R. China
Lihan Cai
Affiliation:
School of Energy Research Xiamen University, 361005 Xiamen, P.R. China
Baodian Fan
Affiliation:
School of Energy Research Xiamen University, 361005 Xiamen, P.R. China
Haoran Cheng
Affiliation:
School of Energy Research Xiamen University, 361005 Xiamen, P.R. China
Songsheng Zheng
Affiliation:
School of Energy Research Xiamen University, 361005 Xiamen, P.R. China
Chao Chen*
Affiliation:
School of Energy Research Xiamen University, 361005 Xiamen, P.R. China College of Physics and Mechanics and Electrics Xiamen University, 361005 Xiamen, P.R. China
*
ae-mail: cchen@xmu.edu.cn
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Abstract

This letter focuses on the evolution under illumination of the minority carrier lifetime and conversion efficiency of p-type gallium (Ga) co-doped solar grade multicrystalline silicon wafers and solar cells. We present experimental data regarding the concentration of boron-oxygen (B-O) defects in this silicon when subjected to illumination, and the concentration was found to depend on [B]-[P] rather than [B] or the net doping p0([B] + [Ga] – [P]). This result implies that the compensated B is unable to form the B-O defect. Minority carrier lifetime and EQE measurements at different degradation states indicate that the B-O defect and Fe-acceptor pairs are the two key centers contributed to LID in this material.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 64 , Issue 3 , December 2013 , 30103
Copyright
© EDP Sciences, 2013

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