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A Formation of SiO2/4H-SiC Interface by Oxidizing Deposited Poly-Si and High Temperature Hydrogen Annealing

Published online by Cambridge University Press:  10 February 2011

K. Fukuda ,
K. Sakamoto ,
K. Nagai ,
T. Sekigawa ,
S. Yoshida  and
K. Arai
K. Fukuda
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body, Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan, kfukuda@etl.go.jp
K. Sakamoto
Affiliation:
Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan
K. Nagai
Affiliation:
Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan
T. Sekigawa
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body, Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan, kfukuda@etl.go.jp Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan
S. Yoshida
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body, Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan, kfukuda@etl.go.jp Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan
K. Arai
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body, Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan, kfukuda@etl.go.jp Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan
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Abstract

A formation of SiO2/4H-SiC interfaces by oxidizing deposited poly-Si on a 4H-SiC substrate and high temperature hydrogen annealing at low pressure ( 8.5×102 Pa ) has been investigated. The oxidation rate of deposited poly-Si was approximately 100 times faster than that of a SiC. Hydrogen annealing more effectively reduced the flat band voltage shift ( ΔVfb ) of the 4H-SiC MOS structure than argon and vacuum annealing. Moreover, the good SiO2/4H-SiC interface was formed because ΔVfb decreased as the oxidation temperature increased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 105
Copyright
Copyright © Materials Research Society 1999

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References

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