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Self-assembled nano-dots of heteroepitaxial SiC on Si

Published online by Cambridge University Press:  26 February 2011

Takashi Matsumoto ,
Masato Kiuchi ,
Satoshi Sugimoto  and
Seiichi Goto
Takashi Matsumoto
Affiliation:
takashi-matsumoto@aist.go.jp, National Institute of Advanced Industrial Science and Technology (AIST), Research Institute for Innovation in Sustainable Chemistry, 1-8-31 Midorigaoka, Ikeda, Osaka, 563-8577, Japan, +81-72-751-9535, +81-72-751-9637
Masato Kiuchi
Affiliation:
dd160@ni.aist.go.jp, National Institute of Advanced Industrial Science and Technology (AIST), Research Institute for Innovation in Sustainable Chemistry, Japan
Satoshi Sugimoto
Affiliation:
sugimoto@ppl.eng.osaka-u.ac.jp, Osaka University, Graduate School of Engineering, Japan
Seiichi Goto
Affiliation:
goto@ppl.eng.osaka-u.ac.jp, Osaka University, Graduate School of Engineering, Japan
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Abstract

Self-assembled silicon carbide (SiC) nano-dots were fabricated on Si wafers by an organometallic ion beam deposition. The self-assembled SiC nano-dots have the shape of a tile, and were heteroepitaxial SiC on Si.

Keywords

self-assemblynanostructureion-beam processing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO11-06
Copyright
Copyright © Materials Research Society 2006

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References

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