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Effect of Light Intensity on Schottky Barrier Widths and I-V Characteristics of Polymer Heterojunction Photodiodes

Published online by Cambridge University Press:  08 July 2011

Ali Bilge Guvenc ,
Cengiz Ozkan  and
Mihrimah Ozkan
Ali Bilge Guvenc
Affiliation:
Department of Electrical Engineering, University of California Riverside, Riverside, CA 92521, U.S.A.
Cengiz Ozkan
Affiliation:
Department of Mechanical Engineering, University of California Riverside, Riverside, CA 92521, U.S.A. Material Science and Engineering Program, University of California Riverside, Riverside, CA 92521, U.S.A.
Mihrimah Ozkan
Affiliation:
Department of Electrical Engineering, University of California Riverside, Riverside, CA 92521, U.S.A.
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Abstract

The Schottky barriers that forms on the interface between aluminum and organic semiconductor of polymer heterojunction photodiodes based on poly(3-hexylthiophene): [6,6]-phenyl-C61-butyric acid methylester blend, has been investigated according to Mott-Schottky curves. We focused on the effect of light intensity on the Schottky barrier widths and I-V characteristics of the devices. Comparison of the mathematical models and experimental data measured under different light intensities indicate a dependency of Schottky barrier to the light intensity.

Keywords

thin filmphotovoltaicorganic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1359: Symposium NN – Electronic Organic and Inorganic Hybrid Nanomaterials—Synthesis, Device Physics and Their Applications , 2011 , mrss11-1359-nn05-08
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Chaudhary, S., Lu, H. W., Muller, A. M., Bardeen, C. J. and Ozkan, M., Nano Letters 7 (7), 1973–1979 (2007).10.1021/nl070717lGoogle Scholar
2. Kumar, Pankaj, Jain, S. C., Kumar, Vikram, Chand, Suresh, and Tandon, R. P., J. Appl. Phys. 105, 104507 (2009).Google Scholar
3. Yang, Chia-Ming, Tsai, Pei-Yu, Horng, Sheng-Fu, Lee, Kuan-Chen, Tzeng, Shin-Rong, Meng, Hsin-Fei, Shy, Jow-Tsong, and Shu, Ching-Fong, Appl. Phys. Lett. 92, 083504 (2008).Google Scholar
4. Abdou, M. S. A., Orfino, F. P., Son, Y. and Holdcroft, S., Journal of the American Chemical Society 119(19), 4518–4524 (1997).10.1021/ja964229jGoogle Scholar
5. Glatthaar, M., Riede, M., Keegan, N., Sylvester-Hvid, K., Zimmermann, B., Niggemann, M., Hinsch, A. and Gombert, A., Solar Energy Materials and Solar Cells 91(5), 390–393 (2007).Google Scholar
6. Rep, D. B. A., Morpurgo, A. F. and Klapwijk, T. M., Organic Electronics 4(4), 201–207 (2003).10.1016/S1566-1199(03)00016-8Google Scholar
7. Bisquert, J., Garcia-Belmonte, G., Munar, A., Sessolo, M., Soriano, A. and Bolink, H. J., Chemical Physics Letters 465(1-3), 57–62 (2008).10.1016/j.cplett.2008.09.035Google Scholar
8. Muller, R. S., Kamins, T. I. and Chan, M., Device Electronics for Integrated Circuits. (Wiley, New York, 2003).Google Scholar
9. Sze, S. M. and Ng, K. K., Physics of Semiconductors. (Wiley, New Jersey, 2007).Google Scholar
10. Lioudakis, E., Othonos, A., Alexandrou, I. and Hayashi, Y., Applied Physics Letters 91(11), - (2007).Google Scholar
11. Kumar, P., Jain, S. C., Kumar, V., Chand, S. and Tandon, R. P., Journal of Physics D-Applied Physics 42(5), - (2009).Google Scholar
12. Anderson, B. L. and Anderson, R. L., Fundamentals of Semiconductor Devices. (Mc Graw Hill, New York, 2005).Google Scholar
13. Garcia-Belmonte, G., Munar, A., Barea, E. M., Bisquert, J., Ugarte, I. and Pacios, R., Organic Electronics 9(5), 847–851 (2008).Google Scholar
14. Jarosz, G., Journal of Non-Crystalline Solids 354(35-39), 4338–4340 (2008).Google Scholar