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Room Temperature Fabrication of Micro-Crystalline Silicon Films for Tft's By Ecr Pecvd

Published online by Cambridge University Press:  22 February 2011

Yoo-Chan Jeon ,
Seok-Woon Lee  and
Seung-Ki Joo
Yoo-Chan Jeon
Affiliation:
Dept. of Metallurgical Eng., Seoul National University, Seoul, 151-742, Korea
Seok-Woon Lee
Affiliation:
Dept. of Metallurgical Eng., Seoul National University, Seoul, 151-742, Korea
Seung-Ki Joo
Affiliation:
Dept. of Metallurgical Eng., Seoul National University, Seoul, 151-742, Korea
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Abstract

Microcrystalline silicon films were formed at room temperature without hydrogen dilution by ECR PECVD. Microwave power more than 400 W was necessary to get crystalline films and the crystallinity increased with the power thereafter. Addition of hydrogen and argon enhanced the crystalline phase formation and the deposition rate, the reason of which was found that hydrogen etched silicon films and argon addition drastically increased the etch rate. Annealing of the films showed that microcrystalline silicon films formed by ECR PECVD have a small fraction of amorphous phase. TFT's using silicon nitride and doped/undoped microcrystalline silicon films were fabricatedd with whole processes at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 81
Copyright
Copyright © Materials Research Society 1994

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