Hostname: page-component-848d4c4894-5nwft Total loading time: 0 Render date: 2024-05-11T05:27:56.494Z Has data issue: false hasContentIssue false

Formation of Au-Si Metastable Phases by Ion Mixing

Published online by Cambridge University Press:  15 February 2011

Bai-Xin Liu
Affiliation:
California Institute of Technology, Pasadena, California, 91125, USA
Leszek S. Wieluniski
Affiliation:
California Institute of Technology, Pasadena, California, 91125, USA
Martti MÄenpÄÄ
Affiliation:
California Institute of Technology, Pasadena, California, 91125, USA
Marc-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, California, 91125, USA
S. S. Lau
Affiliation:
University of California at San Diego, La Jolla, California, 92093, USA
Get access

Abstract

Amorphous and three metastable crystalline phases have been formed in the Au-Si system by 300 keV Xe ion mixing using multilayered samples with average compositions of Au2Si8, AuSi, and Au7 Si3. Generally speaking, during the different stages of irradiation at liquid nitrogen temperature (LNT) or room temperature (R.T.), metastable crystalline phases are formed initially, and eventually an amorphous structure is obtained. Thermal decomposition of amorphous alloys yield different metastable crystalline phases. Some of the metastable crystalline phases can be formed directly from multilayered samples by steady-state thermal annealing. The formation mechanisms of metastable phases are discussed in terms of the processes involved in ion mixing and thermal annealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

a)

Permanent Address: Qinghua University Beijing The People's Republic of China

b)

Permanent Address: Institute of Nuclear Research Warszawa Hoza 69 Poland

c)

Permanent Address: Semiconductor Laboratory, Technical Research Centre of Finland, SF–02150 Espoo 15, Finland

References

REFERENCES

1.Klement, W. K. Jr., Willens, R. H. and Duwez, P., Nature, Lond., 187, 869 (1960).Google Scholar
2.Hiraki, A., Shimizu, A., Iwami, M., Narasawa, T. and Komiya, S., Appl. Phys. Lett. 26, 57 (1975).Google Scholar
3.von Allmen, M., Lau, S. S., Mäenpää, M. and Tsaur, B. Y., Appl. Phys. Lett. 36, 205 (1980).Google Scholar
4.Tsaur, B. Y. and Mayer, J. W., Philos. Mag. A43, 345 (1981).Google Scholar
5.Liu, B. X., Wielunski, L. S., Nicolet, M-A. and Lau, S. S., an accompanying paper submitted to this Conference (Abstract E 1.8).Google Scholar
6.Hiraki, A., Nicolet, M-A. and Mayer, J. W., Appl. Phys. Lett. 18, 178 (1971).Google Scholar