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Integrated Pyroelectric Infrared Sensor Using Pvdf thin Film Deposited by Electro-Spray Method

Published online by Cambridge University Press:  21 February 2011

Ryouji Asahi ,
Jiro Sakata ,
Osamu Tabata ,
Midori Mochizuki ,
Susumu Sugiyama  and
Yasunori Taga
Ryouji Asahi
Affiliation:
Toyota Central Research and Development Laboratories, Inc. Nagakute-cho, Aichi-gun, Aichi-ken, 480-11, Japan
Jiro Sakata
Affiliation:
Toyota Central Research and Development Laboratories, Inc. Nagakute-cho, Aichi-gun, Aichi-ken, 480-11, Japan
Osamu Tabata
Affiliation:
Toyota Central Research and Development Laboratories, Inc. Nagakute-cho, Aichi-gun, Aichi-ken, 480-11, Japan
Midori Mochizuki
Affiliation:
Toyota Central Research and Development Laboratories, Inc. Nagakute-cho, Aichi-gun, Aichi-ken, 480-11, Japan
Susumu Sugiyama
Affiliation:
Toyota Central Research and Development Laboratories, Inc. Nagakute-cho, Aichi-gun, Aichi-ken, 480-11, Japan
Yasunori Taga
Affiliation:
Toyota Central Research and Development Laboratories, Inc. Nagakute-cho, Aichi-gun, Aichi-ken, 480-11, Japan
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Abstract

A pyroelectric infrared sensor using a poly(vinylidene fluoride) (PVDF) thin film has been integrated with a read-out circuit on a silicon substrate. The PVDF thin film with a thickness of 1-2 µm was deposited on the sensing area by an electro-spray (ESP) method. A form I crystal and a large pyroelectric coefficient of 4 nCcm−2K−1 were observed just after the deposition without any poling treatments. The fabrication process of the sensor was based on a standard MOS LSI process and a polysilicon sacrificial layer etching technique. In order to reduce the heat capacitance and the thermal conduction, the PVDF thin film was supported on a thin Si3N4 membrane structure formed by etching a part of the silicon substrate under the sensing area. The sensor with a sensing area of 400x400 µm2 had a responsivity of 98 V/W, a detectivity of l.4× 107 cmHz1/2W−1, an NEP of 2.9× 10−99 Hz1/2W at a frequency of 100 Hz and a time constant of 1.3 msec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 79
Copyright
Copyright © Materials Research Society 1993

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References

1. Watton, R. et al. , SPIE 510 Infrared Technology X, 139 (1984).Google Scholar
2. Qkuyama, M. et al. , Tech. Digest of Transducers'87 (1987).Google Scholar
3. Tomita, Y. et al. , Tech. Digest of the 8th Sensor Symp., 59 (1989).Google Scholar
4. Okuyama, M. et al. , Jpn. J. Appl. Phy. Suppl. 21, 1 (1982).Google Scholar
5. Ye, C. et al. , Sensors and Actuators A, 35, 77 (1992).CrossRefGoogle Scholar
6. Cheeks, T. L. et al. , J. Vac. Sci. Technol. 5 (4), Jun/Aug. 1917 (1987).CrossRefGoogle Scholar
7. Lovinger, A. J., Jpn. J. Appl. Phy. Suppl. 24, 2 (1985).Google Scholar
8. Munch, W. V. et al. , Sensors and Actuators A, 25–27, 167 (1991).Google Scholar
9. Hammes, P. C. A. et al. , Sensors and Actuators A, 32, 396 (1992).CrossRefGoogle Scholar
10. Lee, A. et al. , Thin Solid Films. 181, 245 (1989).CrossRefGoogle Scholar
11. Sakata, J. et al. , Thin Solid Films, 195, 175 (1991).CrossRefGoogle Scholar
12. Takahashi, T. et al. , Appl. Phy. Lett. 37 (9), 1 Nov, 791 (1980).CrossRefGoogle Scholar
13. Suzuki, M. et al. , Tech. Digest of the 9th Sensor Symp., 71 (1990).Google Scholar
14. Tabata, O. et al. , Proc. of the 2nd Int. Symp. on Micro Machine and Human Science, 163 (1991).Google Scholar