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Thermo-Electric Performance of poly-Si0.7Ge0.3

Published online by Cambridge University Press:  10 February 2011

D.D.L. Wijngaards  and
R.F. Wolffenbuttel
D.D.L. Wijngaards
Affiliation:
Delft University of Technology, Faculty ITS, Dept. for Micro-electronics, Mekelweg 4, 2628 CD Delft, The Netherlands Phone +31 15 278 4707, Fax. +31 15 278 5755
R.F. Wolffenbuttel
Affiliation:
Delft University of Technology, Faculty ITS, Dept. for Micro-electronics, Mekelweg 4, 2628 CD Delft, The Netherlands Phone +31 15 278 4707, Fax. +31 15 278 5755
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Abstract

The performance of poly-Si0.7Ge0.3 as a thermo-electric material that is fully process compatible with IC fabrication in silicon been fully analyzed and characterized. The application is in on-chip thermal stabilization of a micromachined platform in silicon. A Seebeck coefficient α= -174 μV/K and a figure of merit z= 0.173 has been obtained for n-type material. Measurements indicate a cooling capability of 2.1 K below ambient temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I5.5
Copyright
Copyright © Materials Research Society 2003

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