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Comparative Thickness Measurements of Heterojunction Layers by Ellipsometric, RBS, and XTEM Analysis+

Published online by Cambridge University Press:  26 February 2011

J. A. Woollam ,
P. G. Snyder ,
A. W. McCOrmick ,
A. K. Rai ,
D. C. Ingram ,
P. P. Pronko  and
J. J. Geddes
J. A. Woollam
Affiliation:
Department of Electrical Engineering, University of Nebraska, Lincoln, NE, 68588–0511
P. G. Snyder
Affiliation:
Department of Electrical Engineering, University of Nebraska, Lincoln, NE, 68588–0511
A. W. McCOrmick
Affiliation:
Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, OH 45432
A. K. Rai
Affiliation:
Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, OH 45432
D. C. Ingram
Affiliation:
Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, OH 45432
P. P. Pronko
Affiliation:
Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, OH 45432
J. J. Geddes
Affiliation:
Physical Sciences Center, Honeywell Corporation, Bloomington, MN 55420
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Abstract

Variable Angle of incidence Spectroscopie Ellipsometry (VASE), Rutherford Backscattering (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM), are used to measure heterojunction layer thicknesses in an AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 755
Copyright
Copyright © Materials Research Society 1987

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Footnotes

+

Supported by NASA Lewis Grant NAG-3–154, and the Naval Air Systems Command.

References

REFERENCES

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