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The Thermal Stability of Fluorine Doped Silicon Oxide Films Formed by Ecrcvd With SiF4 and O2 Gases

Published online by Cambridge University Press:  15 February 2011

Seoghyeong Lee ,
Jae-Yoon Yoo  and
Jong-Wan Park
Seoghyeong Lee
Affiliation:
Dept.of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133–791, KOREA, jwpark@hyunp1.hanyang.ac.kr
Jae-Yoon Yoo
Affiliation:
Dept.of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133–791, KOREA, jwpark@hyunp1.hanyang.ac.kr
Jong-Wan Park
Affiliation:
Dept.of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133–791, KOREA, jwpark@hyunp1.hanyang.ac.kr
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Abstract

The reliability of SiOF films for intermetal dielectrics in multilevel interconnections of ULSIs is investigated. SiOF films were deposited by ECRCVD using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films were carried out in terms of air exposure time. The reliability test of Cu / TiN / SiOF / Si specimen was carried out in terms of temperatures by RTA in N2 ambient. After O2 plasma treatment, no appreciable peak directly related to moisture absorption was detected. The C-V characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu / TiN / SiOF / Si system was found to be reliable up to 600 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 119
Copyright
Copyright © Materials Research Society 1997

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