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Island Coalescence Induced Substructure Within GaP Epitaxial Layers Grown on (001), (111), (110) and (113) Si

Published online by Cambridge University Press:  10 February 2011

V. Narayanan ,
S. Mahajan ,
K. J. Bachmann ,
V. Woods  and
N. Dietz
V. Narayanan
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe AZ 85287-6006, vijayn@asu.edu
S. Mahajan
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe AZ 85287-6006, vijayn@asu.edu
K. J. Bachmann
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695-7919
V. Woods
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
N. Dietz
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
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Abstract

GaP islands grown on selected surfaces of Si and their coalescence behavior have been investigated by transmission electron microscopy. These layers were grown by chemical beam epitaxy. A number of significant observations emerge from this study. First, planar defect formation has been shown to be related to stacking errors on the smaller P-terminated {111} facets of GaP islands. Amongst the four orientations, (111) epilayers have a higher density of stacking faults and first order twins because of more P-terminated {111} facets per island. Second, multiple twinning on exposed {111} facets can produce tilt boundaries and irregular growths when islands coalesce. Third, inversion domain boundaries lying on {110} planes have been shown to form during GaP island coalescence across monatomic steps on (001) Si. Image simulations have been performed to show that these boundaries can be seen in high resolution lattice images and the observed contrast is attributed to the presence of wrong Ga-Ga and P-P bonds at the inversion boundary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 53
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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