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Growth and Characterization of In-Based Nitride Compounds and their Double Heterostructures

Published online by Cambridge University Press:  10 February 2011

V. A. Joshkin ,
J. C Roberts ,
E. L. Piner ,
M. K. Behbehani ,
F. G. McIntosh ,
L. Wang ,
S. Lin ,
I. Shmagin ,
S. Krishnankutty  and
R. M. Kolbas
...Show all authors
V. A. Joshkin
Affiliation:
Dept. of ECE, Campus Box 7911, N. C. State University, Raleigh, NC 27695
J. C Roberts
Affiliation:
Dept. of ECE, Campus Box 7911, N. C. State University, Raleigh, NC 27695
E. L. Piner
Affiliation:
Dept. of MSE, Campus Box 7907, N. C. State University, Raleigh, NC 27695
M. K. Behbehani
Affiliation:
Dept. of MSE, Campus Box 7907, N. C. State University, Raleigh, NC 27695
F. G. McIntosh
Affiliation:
Dept. of ECE, Campus Box 7911, N. C. State University, Raleigh, NC 27695
L. Wang
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Alburquerque, NM 87185
S. Lin
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Alburquerque, NM 87185
I. Shmagin
Affiliation:
Dept. of ECE, Campus Box 7911, N. C. State University, Raleigh, NC 27695
S. Krishnankutty
Affiliation:
Dept. of ECE, Campus Box 7911, N. C. State University, Raleigh, NC 27695
R. M. Kolbas
Affiliation:
Dept. of ECE, Campus Box 7911, N. C. State University, Raleigh, NC 27695
N. A. El-Masry
Affiliation:
Dept. of MSE, Campus Box 7907, N. C. State University, Raleigh, NC 27695
S. M. Bedair
Affiliation:
Dept. of ECE, Campus Box 7911, N. C. State University, Raleigh, NC 27695
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Abstract

We report on the growth and characterization of InGaN bulk films and AlGaN/InGaN/AlGaN double heterostructures (DHs). Good quality bulk InGaN films have been grown by metalorganic chemical vapor deposition (MOCVD) with up to 40% InN as characterized by x-ray diffraction. The effect of hydrogen in the growth ambient on the lnN% incorporation in the InGaN films is presented. Photoluminescence (PL) spectra of AlGaN/InGaN/AlGaN DHs exhibit emission wavelengths from the violet through yellow depending on the growth conditions of the active InGaN layer. The PL spectra are fairly broad both at room temperature and 20 K, and could be a result of native defects or impurity related transitions. We also observed a linear dependence between the PL intensity and excitation power density in the 0.001 W/cm2 to 10 MW/cm2 range. Time resolved PL of one of these DHs suggest a recombination lifetime on the order of 520 ps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 13
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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