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Epitaxial CoSi2 formation by a Cr or Mo interlayer

Published online by Cambridge University Press:  14 March 2011

C. Detavernier ,
R.L. Van Meirhaeghe ,
F. Cardon ,
K. Maex ,
B. Brijs  and
W. Vandervorst
C. Detavernier
Affiliation:
Vakgroep Vaste Stofwetenschappen, Universiteit Gent, Krijgslaan 281/S1, B-9000 Gent, Belgium
R.L. Van Meirhaeghe
Affiliation:
Vakgroep Vaste Stofwetenschappen, Universiteit Gent, Krijgslaan 281/S1, B-9000 Gent, Belgium
F. Cardon
Affiliation:
Vakgroep Vaste Stofwetenschappen, Universiteit Gent, Krijgslaan 281/S1, B-9000 Gent, Belgium
K. Maex
Affiliation:
also at E.E. Dept, K.U. Leuven, B-3001 Leuven, Belgium
B. Brijs
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
W. Vandervorst
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

We have studied CoSi2 formation in the presence of a Cr or Mo interlayer or capping layer. We shall show that, contrary to what was previously reported, Cr and Mo may be used as interlayers to grow epitaxial CoSi2. However, unlike for Ti, the thickness of the interlayer is very important. If the Cr or Mo interlayer is too thick (> 5 nm), polycrystalline CrSi2 or MoSi2 are formed first and epitaxial growth of CoSi2 becomes impossible. However, both XRD and random/channeling RBS results indicate that for a 2-3 nm interlayer of Cr or Mo, CoSi2 forms epitaxially on Si(100). For thinner interlayers, there is a preferential (220) and (400) orientation. This can be explained by the presence of Cr or Mo on the CoSi grain boundaries, which will affect the heterogeneous nucleation of CoSi2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C10.2.1
Copyright
Copyright © Materials Research Society 2000

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References

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