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Amorphous Si1−xBx ALLOYS: Atomic Fine Structure and Optical Properties

Published online by Cambridge University Press:  16 February 2011

J. R. A. Carlsson ,
C. Bandmann ,
S. Csillag ,
X.-H. Li  and
M. Johansson
J. R. A. Carlsson
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
C. Bandmann
Affiliation:
Institute of Physics, University of Stockholm, Vanadisvägen 9, 11346 Stockholm, Sweden.
S. Csillag
Affiliation:
Institute of Physics, University of Stockholm, Vanadisvägen 9, 11346 Stockholm, Sweden.
X.-H. Li
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
M. Johansson
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
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Abstract

In order to study the dependence of the atomic fine structure and optical band gap of the amorphous alloy on concentration and annealing temperature, thin Si1−XBX alloy films were grown and then annealed at temperatures from 400 to 1050 °C. The films were characterized by Extended Energy Loss Fine Structure spectroscopy (EXELFS), High Resolution transmission Electron Microscopy (HREM), Auger Electron Spectroscopy (AES), and light absorption spectro-photometry. It is shown that all the amorphous Si1−XBX alloys are thermally stable (e.g., >1050 °C for x=0.6) as compared to a-Si, and that the optical band gap of the alloys increases gradually with annealing temperatures up to 700 – 900 °C. When annealed at higher temperatures the band gap increased rapidly, corresponding to a phase transformation between two amorphous phases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 577
Copyright
Copyright © Materials Research Society 1994

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References

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