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Phosphorus Oxide Assisted n-type Dopant Diffusion in 4H-Silicon Carbide

Published online by Cambridge University Press:  01 February 2011

Suwan P Mendis  and
Chin-Che Tin
Suwan P Mendis
Affiliation:
mendisp@auburn.edu, Auburn University, Physics, Auburn, Alabama, United States
Chin-Che Tin
Affiliation:
tinchin@auburn.edu, Auburn University, Physics, Auburn, Alabama, United States
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Abstract

Phosphorus is an important n-type dopant for both silicon and silicon carbide. Although solid-state diffusion of phosphorus in silicon has been well documented and experimentally proven, not much is known about phosphorus solid-state diffusion in silicon carbide, especially at lower temperatures. A convenient source of phosphorus for solid-state diffusion in silicon carbide is phosphorus oxide. The possibility of using phosphorus oxide as a dopant source for silicon carbide is investigated by considering the probable reactions between silicon carbide and phosphorus oxide at temperatures below 1700 K using published thermodynamic data. By considering the standard free energies of reactions, it can be shown that phosphorus can be introduced in silicon carbide at temperatures below 1700 K using phosphorus oxide. A successful development of low temperature dopant incorporation in silicon carbide would reduce the need for high temperature processes and prevent process-induced thermal degradation of critical device structures such as the oxide-semiconductor interface. Experimental results showing phosphorus impurity incorporation and activation in 4H-SiC are presented.

Keywords

dopantdiffusionsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B07-12
Copyright
Copyright © Materials Research Society 2010

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