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Electronic States Associated with Grain Boundaries in Silicon*

Published online by Cambridge University Press:  15 February 2011

C. M. Shyu  and
L. J. Cheng
C. M. Shyu
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California, 91109, USA
L. J. Cheng
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California, 91109, USA
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Abstract

The density of states at the grain boundary is found to be a complicated function of both the defect state property and the physical location of the defect at the boundary. A modified double-depletion-layer model concerning the nonuniform distribution of defects along the boundary is presented. A method is developed which can estimate the level location from the complex DLTS spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 131
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

The research described in this paper was carried out for the Flat-Plate Solar Array Project, Jet Propulsion Laboratory, California Institute of Technology, and was sponsored by the U.S. Department of Energy through an agreement with NASA.

References

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