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Vapor phase transport of AlN in an RF heated reactor: Low and high temperature studies

Published online by Cambridge University Press:  01 February 2011

V. Noveski ,
R. Schlesser ,
J. Freitas ,
S. Mahajan Jr ,
S. Beaudoin  and
Z. Sitar
V. Noveski
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7919, USA Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ, 85287–6006, USA
R. Schlesser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7919, USA
J. Freitas
Affiliation:
Naval Research Laboratory, Washington DC, USA
S. Mahajan Jr
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ, 85287–6006, USA
S. Beaudoin
Affiliation:
School of Chemical Engineering Purdue University, West Lafayette, IN, 47907–2100, USA
Z. Sitar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7919, USA
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Abstract

AlN crystals were grown from the vapor phase in an RF heated AlN sublimation reactor. The studies were performed with the following goals: 1) to optimize the growth rate by investigating mass transfer effects, and 2) to establish a process for epitaxial growth on AlN seeds. A one-dimensional mass transfer model based on equilibrium sublimation and gas-phase diffusion was developed. Model parameters were estimated and the model was validated from growth experiments carried out in a 600 Torr nitrogen atmosphere and temperatures ranging from 2000 to 2400°C. Continuous growth on AlN seed crystals was accomplished as a result of optimizing the initial stage of growth and achieving a delicate balance between the rate of mass transfer and the rate of surface rearrangement. During this experimental study, centimeter-size single crystals of AlN were obtained within the 1.25” diameter boule that was grown at a predicted growth rate of 0.1–0.3 mm/hr, at 500 Torr of nitrogen, short source-to-seed distance, low supersaturation and growth temperatures of 2110–2140°C. Chemical analysis of impurities in the grown AlN boules confirmed a very low oxygen contamination of 100 ppm wt. Cathodoluminescence studies showed well defined near band edge emission peak located slightly above 6 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y2.8
Copyright
Copyright © Materials Research Society 2004

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References

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