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Low Pressure CVD Growth of AlxTi1-xN Films with Tetrakis- (Dimethylamido)Titanium (Tdmat) and Dimethyl Aluminum Hydride (DMAH) Precursors

Published online by Cambridge University Press:  10 February 2011

Y.-M. Sun ,
J. Endle ,
J. G. Ekerdt ,
N. M. Russell ,
M. D. Healy  and
J. M. White
Y.-M. Sun
Affiliation:
Department of Chemistry and Biochemistry, Department of Chemical Engineering, The University of Texas at Austin, Austin, TX 78712
J. Endle
Affiliation:
Semiconductor Process and Device Center, Texas Instruments, Dallas, TX 75265
J. G. Ekerdt
Affiliation:
Semiconductor Process and Device Center, Texas Instruments, Dallas, TX 75265
N. M. Russell
Affiliation:
Schumacher R&D, 1969 Palomar Oaks Way, Carlsbad, California 92009_1307.
M. D. Healy
Affiliation:
Schumacher R&D, 1969 Palomar Oaks Way, Carlsbad, California 92009_1307.
J. M. White
Affiliation:
Department of Chemistry and Biochemistry, Department of Chemical Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

AlxTi1-xN film growth has been studied by a organometallic chemical vapor deposition and in-situ X-ray photoelectron spectroscopy. Terakis(dimethylamido)titanium (TDMAT) and dimethyl aluminum hydride (DMAH) were used as the Ti, N and Al precursors. AlTiN film growth was observed on SiO2/Si(100) with substrate temperatures between 200 and 400 °C. The Al content in the film is controlled by the ratio of partial pressures of the two precursors in the gas phase. The metal to C to N ratio is approximately constant at 1:1:1 for most conditions studied. The chemical states of Ti, C, and N in AlxTi1-xN and titanium-carbo-nitride (TiCN) films are identical, while the Al chemical state is nitride at low, but increasingly carbidic at high Al concentration. The initial growth rate on SiO2 was significantly suppressed by the presence of DMAH. At lower growth temperatures, the DMAH effect is more severe. Good step coverage was observed for AlxTi1-xN on 0.3 μm vias with a 3:1 aspect ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 165
Copyright
Copyright © Materials Research Society 1998

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References

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