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Raman Studies of Boron Induced Structural Changes in Amorphous Silicon-Boron Alloys

Published online by Cambridge University Press:  25 February 2011

G. Yang ,
P. Bai ,
B. Y. Tong ,
S. K. Wong  and
I. Hill
G. Yang
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY12180, USA
P. Bai
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY12180, USA
B. Y. Tong
Affiliation:
Center of Chemical Physics, University of Western Ontario, London, Ontario, Canada
S. K. Wong
Affiliation:
Center of Chemical Physics, University of Western Ontario, London, Ontario, Canada
I. Hill
Affiliation:
Surface Science Laboratory, University of Western Ontario, London, Ontario, Canada
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Abstract

A new amorphous Si1-x.Bx. alloy with composition of boron x ranging from 0.01 to 0.5 was produced in a low pressure chemical vapor deposition (LPCVD) system. We performed Raman scattering experiments on the a-Si1−xBx alloys and specifically monitored the Si-Si TO-like mode at around 480cm−1 and the TA-like mode at around 130cm−1. A pronounced broadening of the TO-like band as well as a decrease of the intensity ratio ITo/ITA are observed with an increase of boron concentration in the a-Si1−x Bx alloys. Based on the Raman spectra, the structural changes induced by boron incorporation in the a-Si network are discussed in the conceptual framework of the continuum random network (CRN) model. We conclude that boron incorporation enhances the structural disorder and induces topological changes in the amorphous network.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 309
Copyright
Copyright © Materials Research Society 1989

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References

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