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Terahertz Detection Related to Plasma Excitations in Nanometer Gate Length Field Effect Transistor.

Published online by Cambridge University Press:  01 February 2011

Wojciech Knap ,
A. El Fatimy ,
R. Tauk ,
S. Boubanga Tombet  and
F. Teppe
Wojciech Knap
Affiliation:
knap@univ-montp2.fr, CNRS, GES, UMR 5650 CNRS-Université Montpellier II, Bt 21, CC074, Place Eugne Bataillon, 34095 Montpellier, Montpellier, 34095, France
A. El Fatimy
Affiliation:
Abdelouahad.elfatimy@ges.univ-montp2.fr, GES UMR 5650, CNRS & Montpellier University, Montpellier, 34095, France
R. Tauk
Affiliation:
tauk@ges.univ-montp2.fr, GES UMR 5650, CNRS & Montpellier University, Montpellier, 34095, France
S. Boubanga Tombet
Affiliation:
albon@ges.univ-montp2.fr, GES UMR 5650, CNRS & Montpellier University, Montpellier, 34095, France
F. Teppe
Affiliation:
Teppe@ges.univ-montp2.fr, GES UMR 5650, CNRS & Montpellier University, Montpellier, 34095, France
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Abstract

The channel of nanometre field effect transistor can act as a resonant cavity for plasma waves. The frequency of these plasma waves is in the Terahertz range and can be tuned by the gate length and the gate bias. During the last few years Terahertz detection and emission related to plasma wave instabilities in nanometre size field effect transistors was demonstrated experimentally. In this work we review the recent results on sub-THz and THz detection by 50-300nm gate length III-V HEMTs and Si MOSFETs. We present experimental results on the resonant and nonresonant (overdamped) plasma wave detection and discuss possible applications of nanometre field effect transistors as new detectors of THz radiations.

Keywords

nanostructureIII-Vphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L06-09
Copyright
Copyright © Materials Research Society 2007

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References

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