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From the Mystery to the Understanding of the Self-Interstitials in Silicon

Published online by Cambridge University Press:  15 February 2011

W. Frank ,
A. Seeger  and
U. Gösele
W. Frank
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Physik, Heisenbergstr. 1, and Universität Stuttgart, Institut für Theoretische und Angewandte Physik, Pfaffenwaldring 57, D-7000 Stuttgart 80, Germany
A. Seeger
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Physik, Heisenbergstr. 1, and Universität Stuttgart, Institut für Theoretische und Angewandte Physik, Pfaffenwaldring 57, D-7000 Stuttgart 80, Germany
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Abstract

Our present knowledge on self-interstitials in silicon and the rôle these defects play under widely different experimental conditions are surveyed. In particular, the following phenomena involving self-interstitials either in supersaturations or under high-temperature thermal-equilibrium conditions are considered: mobility-enhanced diffusion of self-interstitials below liquid-helium temperature, thermally activated diffusion of self-interstitials at inter-mediate temperatures (14O K to 600 K), concentration-enhanced diffusion of Group-III or Group-V elements in silicon at higher temperatures, and— as examples for high-temperature equilibrium phenomena — self-diffusion and diffusion of gold in silicon. This leads to the picture that the self-interstitials in silicon may occur in different electrical charge states and possess dumbbell configurations or are extended over several atomic volumes at intermediate or high temperatures, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 31
Copyright
Copyright © Materials Research Society 1981

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