Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-26T14:06:50.328Z Has data issue: false hasContentIssue false
  • English
  • Français

Post CMP Cleaning Using Ice Scrubber Cleaning

Published online by Cambridge University Press:  15 February 2011

N. Takenaka ,
Y. Satoh ,
A. Ishihama  and
K. Sakiyama
N. Takenaka
Affiliation:
VLSI Development Laboratories, SHARP Corporation 2613-1, Ichinomoto-cho, Tenri, Nara, 632, JAPAN
Y. Satoh
Affiliation:
VLSI Development Laboratories, SHARP Corporation 2613-1, Ichinomoto-cho, Tenri, Nara, 632, JAPAN
A. Ishihama
Affiliation:
VLSI Development Laboratories, SHARP Corporation 2613-1, Ichinomoto-cho, Tenri, Nara, 632, JAPAN
K. Sakiyama
Affiliation:
VLSI Development Laboratories, SHARP Corporation 2613-1, Ichinomoto-cho, Tenri, Nara, 632, JAPAN
Get access

Abstract

The surface cleaning technology with the use of ice scrubber cleaning has been developed to remove the particles after Chemical Mechanical Polishing (CMP) process. The ice particles with a high speed nearly equal to the sound velocity bombarded the Si wafer surface, as a result, the residue from the slurry solution was reduced from ∼5/cm2 to ∼0.05/cm2 and the metal impurities are completely eliminated below the defect limitation for ICP mass spectroscopy. The charge build-up damage due to the high speed particles is not introduced into the the MOS capacitors. This technology is quite effective, compared with the conventional brush scrubber method and is applicable for the cleaning process below the quarter micron devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 121
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Warnock, J., J.Electrochem.Soc., 138,8,(1991), p.2398 Google Scholar
[2] cook, Lee. M., Journal of Non-Crystallinc Solids, 120,(1990), p.152 Google Scholar
[3] Fruitman, C., Desai, M., VMIC Conference, 103, (1994), p.218 Google Scholar
[4] Patrick, W.J., et.al., J.Electrochem. Soc., 138, 6, (1991), p. 1778 Google Scholar
[5] Poon, S., Sitarman, A.R., et.al., VMIC Conference, (1993), p.59 Google Scholar
[6] Hayashi, Y., Takahashi, S., et.al., Jpn.J.Appl.Phys. 32, (1993), p.1060 Google Scholar
[7] Lai, W.Y-C., Miner, J.F., et.al., VMIC Conference, 103, (1994), p. 179 Google Scholar
[8] Hayashi, Y., Takahashi, S., Jpn. J. Appl. Phys., 32, (1993), p.1060 Google Scholar
[9] Lakshminarayanan, S., et.al., VMIC Conference, 103, (1994), p.49 Google Scholar
[10] Joshi, R.V., IEEE Electron Device Letters, 14, 3, (1993), p.129 Google Scholar
[11] Keast, C.L., et.al., VMIC Conference, 103, (1994), p.204 Google Scholar
[12] Sugimoto, F., et.al., Jpn.J.Appl.Phys., 34, (1995), p.30 Google Scholar
[13] Ohmori, T., Komiya, H., Ultra Clean Technology, 2, (1990), p.213 Google Scholar