Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T14:43:08.770Z Has data issue: false hasContentIssue false
  • English
  • Français

Interfacial Layer Effects in Ba1-xSrxTiO3 Thick Films prepared by Plasma Spray

Published online by Cambridge University Press:  11 February 2011

Kipyung Ahn ,
Bruce W. Wessels  and
Sanjay Sampath
Kipyung Ahn
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
Bruce W. Wessels
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
Sanjay Sampath
Affiliation:
Department of Materials Science and Engineering, SUNY-Stony Brook, Stony Brook, NY 11794
Get access

Abstract

The dielectric properties of high k dielectric thick films prepared by thermal spray were investigated. BaTiO3 and Ba0.68Sr0.32TiO3 thick films were deposited using plasma spray on Ag-Pd screen-printed alumina substrates. The sprayed films were predominantly polycrystalline but contained an amorphous second phase. The dielectric constants of the films decreased with decreasing film thickness in 10 ∼ 60 μm range. This was attributed to the presence of an interfacial layer between the film and the substrate as determined by capacitance measurements. The capacitance density of the interfacial layer was determined to be ∼ 2.7 nF/cm2. The capacitance density of the interfacial layer increased to 12 nF/cm2 after post heat treatment at 500 °C for 20 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 758: Symposium LL – Rapid Prototyping Technologies , 2002 , LL2.7
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Church, K. H., Fore, C., Feeley, T., in Materials Development for Direct Write technologies, edited by Chrisey, D. B., Gamota, D. R., Helvajian, H., and Taylor, D. P., (Mater. Res. Soc. Proc. 624, San Francisco, CA, 2000) pp3–8 Google Scholar
2. Warren, W. L., in Direct-Write Technologies for Rapid Prototyping Applications, edited by Piqué, A. and Chrisey, D. B., (Academic Press, 2002), pp17–31 Google Scholar
3. Sampath, S., Herman, H., Patel, A., Gambino, R., Greenlaw, R., and Tormey, E., in Materials Development for Direct Write technologies, edited by Chrisey, D. B., Gamota, D. R., Helvajian, H., and Taylor, D. P., (Mater. Res. Soc. Proc. 624, San Francisco, CA, 2000) pp181–188 Google Scholar
4. Ctibor, P. and Sedlacek, J., J. Eur. Ceram. Soc. 21, 1685 (2001)Google Scholar
5. Dent, A. H., Patel, A., Gutleber, J., Tormey, E., Sampath, S., Herman, H., Mater. Sci. Eng. B 87, 23 (2001)Google Scholar
6. Ahn, K., Wessels, B. W., Greenlaw, R., and Sampath, S., in Electroactive Polymers and Rapid Prototyping, edited by Cohen, Y. B., (Mater. Res. Soc. Proc. 698, Boston, MA, 2001)Google Scholar
7. Shaw, T. M., Trolier-McKinstry, S., and McIntyre, P. C., Annu. Rev. Mater. Sci. 30, 263 (2000)Google Scholar
8. Young, E. J., Mateeva, E., Moore, J. J., Mishra, B., and Loch, M., Thin Solid Films 377–378, 788 (2000)Google Scholar