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Transient Infrared Reflection and Transmission of Silicon During Pulsed Laser Annealing

Published online by Cambridge University Press:  15 February 2011

Steven C. Moss  and
Charles L. Marquardt
Steven C. Moss
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375, USA
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Abstract

We report measurements of reflectivity and transmission of probe beams at 0.633, 1.06, 1.34, and 3.39 μm during pulsed laser annealing of silicon. The transient infrared optical response of the silicon was monitored with several fast photodetectors. The diversity of detector response to transmitted light indicates that contradictory results obtained previously may be artifacts of photodetector response.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 79
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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5. The internal transmissivity, Tm, is defined by the relationship for the transmission of a thin film, where r1 and r2 are the reflectivities of the two surfaces.Google Scholar
6. During the transmission measurements at 1.06 μm and 1.34 μm, the Ge APD does not show significant photoemission as its baseline. When the probe is blocked before the sample, however, significant photoemission is observed. Consequently, this indicates that the Ge APD does not correctly follow the optical signal under these conditions.Google Scholar
7. A longpass filter with a cutoff at 2.4 μm was used during the 3.39 μm measurements. This filter completely eliminated the photoemission from the 3.39 μm measurements. At the other probe wavelengths the photoemission could not be completely eliminated. The residual photoemission was directly subtracted from the transmission results as a first step in the reduction of the raw data. The reflection and transmission data were then analyzed point-by-point to yield the transient reflectivity of the front surface, R(t), and the transient internal transmissivity, Tm(t).Google Scholar