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X-Ray Investigation of Strain Relaxation in Short-Period SimGen Superlattices using Reciprocal Space Mapping

Published online by Cambridge University Press:  25 February 2011

P. Hamberger ,
E. Koppensteiner ,
G. Bauer ,
H. Kibbel ,
H. Presting ,
E. Kasper  and
A. Pesek
P. Hamberger
Affiliation:
Johannes Kepler University, Institut fir Halbleiterphysik, A-4040 Linz, Austria
E. Koppensteiner
Affiliation:
Johannes Kepler University, Institut fir Halbleiterphysik, A-4040 Linz, Austria
G. Bauer
Affiliation:
Johannes Kepler University, Institut fir Halbleiterphysik, A-4040 Linz, Austria
H. Kibbel
Affiliation:
Daimler Benz AG, Forschungszentrum, D-7900 Ulm, Germany
H. Presting
Affiliation:
Daimler Benz AG, Forschungszentrum, D-7900 Ulm, Germany
E. Kasper
Affiliation:
Daimler Benz AG, Forschungszentrum, D-7900 Ulm, Germany
A. Pesek
Affiliation:
Johannes Kepler University, Forschungsinstitut fir Optoelektronik, A-4040 Linz, Austria
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Abstract

The optoelectronic properties of SimGen strained layer superlattices (SLS's) depend strongly on the structural perfection. We used double crystal and triple axis x-ray diffractometry to characterize the structural properties of short period Si9Ge6 SLS's grown on about lμm thick step-graded SiGe alloy buffers. As grown SLS's and samples annealed subsequently at 550°C, 650°C and 780°C for 60 mmn were investigated. Precise strain data were extracted from two-dimensional reciprocal space maps around (004) and (224) reciprocal lattice points. These data were used as refined input parameters for the dynamical simulation of the integrated intensity along the qll[004] direction. Annealing causes interdiffusion as indicated by the decreasing superlattice (SL)-satellite peak intensities and by the change of the Si/Ge thickness ratio. However, the full width at half maximum of the SL satellite peaks does not change significantly with annealing up to 650°C. The in-plane SL lattice constant in both samples is increased only slighty by annealing (< 9×10−3 Å). Consequently the interface intermixing due to interdiffusion is the main cause for the shift of the luminescence energy to higher values in these annealed samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 27
Copyright
Copyright © Materials Research Society 1993

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