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Specific Surface Free Energy of Ruby Thin Film Grown on Sapphire Single Crystals Studied by Contact Angle of Liquid Droplet

Published online by Cambridge University Press:  01 February 2011

Takaomi Suzuki ,
Shintaro Sugane ,
Miki Hidaka ,
Katsuya Teshima  and
Shuji Oishi
Takaomi Suzuki
Affiliation:
takaomi@gipwc.shinshu-u.ac.jp, Faculty of Engeering, Shinshu University, Department of Environmenta Science and Technology, 4-17-1, Nagano-shi, 380-8553, Japan
Shintaro Sugane
Affiliation:
Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano-shi, 380-8553, Japan
Miki Hidaka
Affiliation:
Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano-shi, 380-8553, Japan
Katsuya Teshima
Affiliation:
Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano-shi, 380-8553, Japan
Shuji Oishi
Affiliation:
Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano-shi, 380-8553, Japan
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Abstract

Ruby thin film was grown on sapphire substrate by evaporation method of MoO3 flux. Small amount of Na2CO3 was added in order to decrease the evaporation rate of flux. The contact angles of liquids and crystal surfaces were measured for water and formamide droplets, and the specific surface free energy of each face of the crystal was calculated using Fowkes approximation and Wu's mean equations. The growth hillocks on the synthesized thin film were observed. The addition of Na2CO3 incrased the density of hillocks and the specific surface free energy was larger for the ruby thin film, which has larger number of hillocks.

Keywords

crystal growththin filmsurface chemistry
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1054: Symposium FF – Synthesis and Surface Engineering of Three-Dimensional Nanostructures , 2007 , 1054-FF05-24
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

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