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Recombination Related to Two-Dimensional Electron Gas of AlxGa1-xN/GaN Single Heterostructures Studied with Picosecond Time-Resolved Photoluminescence

Published online by Cambridge University Press:  01 February 2011

Qing Yang ,
Rob Armitage ,
Eicke R. Weber ,
Ronald Birkhahn ,
David Gotthold ,
Shiping Guo  and
Brian Albert
Qing Yang
Affiliation:
Department of Materials Science and Engineering, University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Rob Armitage
Affiliation:
Department of Materials Science and Engineering, University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Eicke R. Weber
Affiliation:
Department of Materials Science and Engineering, University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Ronald Birkhahn
Affiliation:
Emcore Corporation, 145 Belmont Drive, Somerset, NJ 08873–1203, USA
David Gotthold
Affiliation:
Emcore Corporation, 145 Belmont Drive, Somerset, NJ 08873–1203, USA
Shiping Guo
Affiliation:
Emcore Corporation, 145 Belmont Drive, Somerset, NJ 08873–1203, USA
Brian Albert
Affiliation:
Emcore Corporation, 145 Belmont Drive, Somerset, NJ 08873–1203, USA
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Abstract

Nearbandgap radiative recombination in undoped AlxGa1-xN/GaN (x = 0.28 to 0.35) single heterostructures grown by metalorganic chemical vapor deposition is investigated using picosecond time-resolved photoluminescence at 11K.Room temperature Hall effect measurements show both high sheet carrier concentrations (∼1×1013 cm-2) and high mobilities (∼1000 cm2/Vs), suggesting the formation of a two-dimensional electron gas (2DEG) at the heterointerface. The luminescence transient of the 3.481 eV emissions, which is usually assigned to donor-bound exciton emission of GaN, consists of an initial fast component and a slow second component. Samples with higher aluminum concentrations show broad luminescence peaks in the spectral range of 3.41—3.45 eV with long decay lifetimes over 1 ns. In addition, the below bandgap emissions saturate at high excitation power and shift toward lower energies with increasing time delay. The observed emissions are explained by the recombination processes involving the 2DEG at the heterointerface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.47
Copyright
Copyright © Materials Research Society 2004

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References

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