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Microstructure Evolution of Al-1.5% Cu Alloy as a Function of Resistance Change Due to Isothermal DC Stressing

Published online by Cambridge University Press:  10 February 2011

T Lee ,
M Schade ,
A Merino ,
J Lee ,
C Christenson ,
C Varker  and
K Evans
T Lee
Affiliation:
SPS-SCG, Motorola Inc., MD:P004, 5005 E. McDowell Rd., Phoenix, AZ, 85008
M Schade
Affiliation:
SPS-SCG, Motorola Inc., MD:P004, 5005 E. McDowell Rd., Phoenix, AZ, 85008
A Merino
Affiliation:
SPS-SCG, Motorola Inc., MD:P004, 5005 E. McDowell Rd., Phoenix, AZ, 85008
J Lee
Affiliation:
SPS-SCG, Motorola Inc., MD:P004, 5005 E. McDowell Rd., Phoenix, AZ, 85008
C Christenson
Affiliation:
SPS-SCG, Motorola Inc., MD:P004, 5005 E. McDowell Rd., Phoenix, AZ, 85008
C Varker
Affiliation:
SPS-SCG, Motorola Inc., MD:P004, 5005 E. McDowell Rd., Phoenix, AZ, 85008
K Evans
Affiliation:
SPS-SCG, Motorola Inc., MD:P004, 5005 E. McDowell Rd., Phoenix, AZ, 85008
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Abstract

This paper investigates Cu segregation and void morphology along AlCu alloy metal lines as a function of resistance change resulting from isothermal DC stressing at 225°C and a current density of J=2×106 A/cm2. The Al-1.5wt.%Cu alloy was deposited via DC magnetron sputtering onto a Si substrate at 525°C with a 1500Å TiW barrier layer. NIST test structures (length = 800µm, thickness = 1.2µm, width = 5 and 10 µm) were utilized in this study. BPSG was used as the insulation layer between Si substrate and conductor. The surface passivation layer was composed of Si3N4/PSG. Various failure criteria were selected to explore the correlation between Cu segregation and void morphology along the metal line and the relative percent resistance change (ΔR/R). The log-normal plots, mean-times-to-failure, and sigmas at each ΔR/R ( -−%, 2%, 5%, 10%, 20%, 100%, 250%) were plotted and listed. The microstructural evolution in terms of void morphology was monitored using SEM. SEM-EDS was used to analyze the Cu concentrations along metal lines tested at various %ΔR criteria.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 109
Copyright
Copyright © Materials Research Society 1998

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References

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