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AB-Initio Calculation of the optical Properties of BN(110) Surface.

Published online by Cambridge University Press:  21 March 2011

Giancarlo Cappellini ,
Guido Satta ,
Maurizia Palummo  and
Giovanni Onida
Giancarlo Cappellini
Affiliation:
INFM-Dipartimento di Fisica, Università di Calgiari, I-09042 Cagliari, Italy
Guido Satta
Affiliation:
INFM-Dipartimento di Fisica, Università di Calgiari, I-09042 Cagliari, Italy
Maurizia Palummo
Affiliation:
INFM-Dipartimento di Fisica, Università di Roma II“Tor Vergata), I-00133, Rome, Italy
Giovanni Onida
Affiliation:
INFM-Dipartimento di Fisica, Università di Roma II“Tor Vergata), I-00133, Rome, Italy
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Abstract

We study the optical properties of the nonpolar (110) surface of cubic Boron Nitride calculated within the first-pinciple DFT-LDA scheme. The reflectance anisotropy (RA) spectrum is analyzed in relation to the better known spectrum of the GaAs(110) surface. The influence of the ionicity on the surface relaxation, the surface states character and the surface optical spectra, is studied. Comparisons with existing data for the surface under study and results to the GaN(110) surface are also given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 677: Symposium AA – Advances in Materials Theory and Modeling–Bridging Over Multiple-Length and Time Scales , 2001 , AA6.2
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Pouch, J.J., Alterovitz, S.A.(Eds.), Synthesis and Properties of Boron Nitride, Trans.Tech. Publications, Aedermannsdorf, 1990.Google Scholar
2. Properties of Group III Nitrides, Ed. by Edgar, J.H., Kansas State University (U.S.A.), IN-SPEC, Institution of Electric Engineers, 1994.Google Scholar
3. Group III Nitride Semiconductors Compounds: Physics and Applications, Edited by Gil, B., Oxford Science Publications, London, 1998.Google Scholar
4. Herman, M.A., Sitter, H., Molecular Beam Epitaxy, Springer, Berlin, 1993.Google Scholar
5. Sole, R. Del, Reflectance Spectroscopy-Theory, Photonic Probes at Surfaces, Ed. by Halevi, P., Elsevier Science, Amsterdam, 1995, pp.133–173.Google Scholar
6. Pulci, O., Onida, G., Sole, R. Del, Reining, L., Phys.Rev.Lett. 81, 5374 (1998).Google Scholar
7. Noguez, C., Phys.Rev.B 62, 2681 (2000).Google Scholar
8. Manghi, F., Sole, R. Del, Selloni, A., Molinari, E., Phys.Rev.B 41, 9935 (1990).Google Scholar
9. Dreizel, R.M., Gross, E.K.U., Density Functional Theory, Spinger, N.Y. 1990.Google Scholar
10. Troullier, N. and Martins, J.L., Phys.Rev.B 43, 1993 (1991).Google Scholar
11. Louie, S.G., Froyen, S., Cohen, M.L., Phys.Rev.B 26, 1738 (1998).Google Scholar
12. Filippetti, A., Fiorentini, V., Cappellini, G., Bosin, A., Phys.Rev. B59, 8026 (1999).Google Scholar
13. Grossner, U., Furthmüller, J., Bechstedt, F., Phys.Rev. B58, 1722 (1998).Google Scholar
14. Zhu, X., Zhang, Z.B., Louie, S.G., Cohen, M.L., Phys.Lett. 63, 2112 (1989).Google Scholar