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Kinetic Modeling of Grain Growth in Polycrystalline Silicon Films Doped with Phosphorus and Boron

Published online by Cambridge University Press:  22 February 2011

H.-J. Kim  and
C. V. Thompson
H.-J. Kim
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
C. V. Thompson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

In previous work it has been shown that doping of silicon with P or As leads to enhanced rates of grain growth while doping with B has little effect, except in compensation of the effect of P or As. Here we report a detailed study of the effects of P doping on normal grain growth in silicon films. We also outline a kinetic model for grain growth which is consistent with the various observed effects of dopants. This model is based on the assumption that dopants primarily affect grain boundary mobilities and that grain boundary motion occurs through parallel diffusive and non-diffusive processes. It is further assumed that the rate of the diffusive process is proportional to the vacancy concentration which is a known function of the electron concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 143
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Wada, Y. and Nishimatsu, S., J. Electrochem. Soc. 125, 1499 (1978).Google Scholar
2. Mei, L., River, M., Kwark, Y., and Dutton, R.W., J. Electrochem. Soc. 129, 1791 (1982).Google Scholar
3. Angelucci, R., Aeveri, M., and Solmi, S., Mater. Chem. Phys., 9, 235 (1983).Google Scholar
4. Kim, H.-J. and Thompson, C.V., Appl. Phys. Lett. 48, 399 (1986).Google Scholar
5. Fair, R.B., and Tsai, J.C.C., J. Electrochem. Soc. 124, 1107 (1977).Google Scholar
6. Fairfield, J.M. and Masters, B.J., J. Appl. Phys. 38, 3148 (1967).Google Scholar
7. Patel, J.R., Testardi, L.R., and Freeland, P.E., Phys. Rev. B13, 3548 (1976).Google Scholar
8. Ho, C.P. and Plummer, J.D., J. Electrochem. Soc. 126, 1516 (1979).Google Scholar
9. Lietoila, A., Wakita, A., Sigmon, T.W., and Gibbons, J.F., J. Appl. Phys. 53, 4399 (1982).CrossRefGoogle Scholar
10. Hillert, M., Acta Met. 13, 229 (1965).Google Scholar
11. Mandura, M.M., Saraswat, K.C., Helms, C.R., and Kamins, T.I., J. Appl. Phys. 51, 5755 (1980).Google Scholar
12. Van Vechten, J.A. and Thurmond, C.D., Phys. Rev. B14, 3539 (1976).Google Scholar
13. Watkins, G.D., in Radiation Damage and Defects in Semiconductors (Institute of Physics, Bristol, 1973) 228.Google Scholar
14. Watkins, G.D., in Lattice Defects in Semiconductors (Institute of Physics, Bristol, 1975) 212.Google Scholar
15. Shockley, W. and Last, J.T., Phys. Rev. 107, 392 (1957).Google Scholar
16. Kim, H.-J. and Thompson, C.V., to be published.Google Scholar
17. Makino, T. and Nakamura, H., Solid-State Electronics 24, 49 (1981).Google Scholar
18. Ichinose, H., Tajima, Y., and Ishida, Y., in Grain Boundary Structure andRelated Phenomea as Proc. Japan Inst. Metals Int. Symp. (Minakami, Gunma Prefecture, 1985) 253.Google Scholar
19. Cunningham, B. and Ast, D. in Grain Boundaries in Semiconductors as Mater. Res. Soc. Proc. edited by Leamy, H.J., Pike, G.E., and Seager, C.H. (North-Holland, New York, 1981) 21.Google Scholar
20. Smith, D.A. and Tan, T.Y., in Grain Boundaries in Semiconductors as Mater. Res. Soc. Proc. edited by Leamy, H.J., Pike, G.E., and Seager, C.H. (North-Holland, New York, 1981) 249.Google Scholar
21. Car, R., Kelly, P.J., Oshiyama, A., and Pantelides, S.T., Phys. Rev. Lett. 54, 360 (1985).Google Scholar
22. Bar-Yam, Y. and Joannopoulos, J.D., J. Electron. Mater. 14a, 261 (1985).Google Scholar