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p-Type Doping of Small-Molecule Organic Semiconductors using Organic Vapor Phase Deposition (OVPD)

Published online by Cambridge University Press:  14 February 2012

M. Brast ,
F. Lindla ,
M. Boesing ,
D. Bertram ,
D. Keiper ,
M. Heuken ,
H. Kalisch  and
A. Vescan
M. Brast
Affiliation:
Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany
F. Lindla
Affiliation:
Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany
M. Boesing
Affiliation:
Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany
D. Bertram
Affiliation:
Philips Technologie GmbH, Philipsstraße 8, 52068 Aachen, Germany
D. Keiper
Affiliation:
AIXTRON SE, Kaiserstraße 98, 52134 Herzogenrath, Germany
M. Heuken
Affiliation:
Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany AIXTRON SE, Kaiserstraße 98, 52134 Herzogenrath, Germany
H. Kalisch
Affiliation:
Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany
A. Vescan
Affiliation:
Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany
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Abstract

In the past few years, organic vapor phase deposition (OVPD) has been demonstrated to be an effective deposition method for high-performance monochrome and white organic light emitting diodes (OLEDs) [1-4]. OVPD provides good material utilization efficiency and large achievable deposition rates.

An application of p-type doping is the improvement of hole injection either from the anode contact or from a charge generation layer in stacked OLEDs [5]. Nevertheless, no reports on p-type doping using OVPD can be found in literature, in part due to the thermal instability and high chemical sensitivity of organic dopants.

In this work, p-type doping using an AIXTRON Gen-1 OVPD tool with two different show-erhead designs is examined. NDP-2 (NOVALED) and N,N‘-diphenyl-N,N‘-bis(1-naphthylphenyl)-1,1‘-biphenyl-4,4‘-diamine (NPB) were used as p-type dopant (guest) and hole-conducting host, respectively. p-Type doped hole-only devices were fabricated and compared with undoped ones.

Two different showerhead designs (made either of aluminum or stainless steel) were investi-gated with respect to OLED performance to determine possible side reactions.

Highly efficient monochrome red OLEDs including a p-type doped hole transport layer were demonstrated exhibiting a current efficiency of 31 cd/A, a power efficiency of 26 lm/W and a driving voltage of 3.7 V without improved light outcoupling (all values at 1000 cd/m2).

Keywords

dopantorganicoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1402: Symposium U – Charge Generation/Transport in Organic Semiconductor Materials , 2012 , mrsf11-1402-u13-32
Copyright
Copyright © Materials Research Society 2012

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References

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