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Defects and Interfaces in GaAs Grown on Si

Published online by Cambridge University Press:  28 February 2011

S. McKernan ,
J. G. Zhu ,
C. B. Carter ,
E. Caridi  and
W. Schaff
S. McKernan
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
J. G. Zhu
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
C. B. Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
E. Caridi
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY 14853
W. Schaff
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY 14853
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Abstract

The characterization of semiconductor epilayers by electron microscopy has revealed many different defects in the epilayer. Observations on three representative examples from GaAs epilayers grown on Si are presented. Double-ribbons, which are formed as a result of dislocation interactions near the heterojunction, have been used to determine the intrinsic and extrinsic stacking-fault energies in GaAs. Inverted stacking-fault pyramids have been observed which have nucleated in the epilayer and grown outward to the surface. Finally, differences in the growth rates of different twins are recorded by using AlGaAs layers to preserve the growth surface at various stages during epilayer growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 273
Copyright
Copyright © Materials Research Society 1988

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References

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