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Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE

Published online by Cambridge University Press:  10 February 2011

K. Horino ,
A. Kuramata  and
T. Tanahashi
K. Horino
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-wakamiya, Atsugi 243–01, Japan
A. Kuramata
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-wakamiya, Atsugi 243–01, Japan
T. Tanahashi
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-wakamiya, Atsugi 243–01, Japan
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Abstract

We investigated the growth process of AlGaN films grown directly on 6H-SiC (0001) substrates by metalorganic vapor phase epitaxy (MOVPE). We focused on the initial growth stage to clarify the mechanism of nitride growth on SiC. From Energy Dispersive X-ray (EDX) analysis we found that an Al-rich region generated naturally at the AlGaN/SiC interface. We also found that Al flux determined the density of grain which generated during the initial growth stage, and this grain density reflected the surface morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 73
Copyright
Copyright © Materials Research Society 1997

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References

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