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MOCVD of GaN-based HEMT structures on 8 inch silicon substrates

Published online by Cambridge University Press:  11 February 2015

Oleg Laboutin ,
Chien-Fong Lo ,
Chen-Kai Kao ,
Kevin O’Connor ,
Wayne Johnson  and
Daily Hill
Oleg Laboutin
Affiliation:
IQE, 200 John Hancock Road, Taunton, MA 02780, U.S.A.
Chien-Fong Lo
Affiliation:
IQE, 200 John Hancock Road, Taunton, MA 02780, U.S.A.
Chen-Kai Kao
Affiliation:
IQE, 200 John Hancock Road, Taunton, MA 02780, U.S.A.
Kevin O’Connor
Affiliation:
IQE, 200 John Hancock Road, Taunton, MA 02780, U.S.A.
Wayne Johnson
Affiliation:
IQE, 200 John Hancock Road, Taunton, MA 02780, U.S.A.
Daily Hill
Affiliation:
IQE, 200 John Hancock Road, Taunton, MA 02780, U.S.A.
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Abstract

Metal organic chemical vapor deposition, as well as material and basic device properties of nitride-based high electron mobility transistor structures on (111) silicon substrates varying in diameter from 4 to 8 inch were studied using in-situ and ex-situ characterization techniques. All substrates used for the growth of the nitride structures in this study were of SEMI standard thicknesses. The total thickness of the nitride structures was in the range of 1.5 – 5 µm. It is reported that nitride structures can be grown on 4, 6 and 8 inch diameter substrates with very similar post-growth wafer shape, material and device characteristics. It is also shown that their crystal quality, 2DEG transport properties and isolation blocking voltages can be improved by increasing nitride structure thickness while maintaining post-growth wafer bow and warp less than 50 µm. The maximum thickness of nitride structures that can be successfully grown on 8 inch diameter SEMI standard substrates seems to be limited to about 4.5 µm due to plastic deformation of Si. Blocking voltages of more than 700 V were achieved using 4.5 µm thick nitride-based high electron mobility transistor structures grown on 8 inch Si substrate.

Keywords

metalorganic depositionnitrideSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t01-06
Copyright
Copyright © Materials Research Society 2015 

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