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Fabrication of One-dimensional Silicon Nano-wires Based on Proximity Effects of Electron-beam Lithography

Published online by Cambridge University Press:  01 February 2011

S. F. Hu  and
C. L. Sung
S. F. Hu
Affiliation:
Taiwan Spin Research Center, National Chung Cheng University, Chia-Yi 621, Taiwan
C. L. Sung
Affiliation:
National Nano Device Laboratories, Hsinchu 30078, Taiwan
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Abstract

One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 4 K up to 300 K show significant nonlinearities and single-electron effect behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

Keywords

A. NanostructuresB. Nanofabrications
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A8.6
Copyright
Copyright © Materials Research Society 2005

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