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Ion Implanted SiO2 Substrates for Nucleating Silicon Oxide Nanowire Growth

Published online by Cambridge University Press:  31 January 2011

Jason L. Johnson ,
Yongho Choi  and
Ant Ural
Jason L. Johnson
Affiliation:
jason.l.johnson@ufl.edu, University of Florida, Electrical and Computer Engineering, Gainesville, Florida, United States
Yongho Choi
Affiliation:
dodream@ufl.edu, University of Florida, Electrical and Computer Engineering, Gainesville, Florida, United States
Ant Ural
Affiliation:
antural@ufl.edu, University of Florida, Electrical and Computer Engineering, Gainesville, Florida, United States
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Abstract

We experimentally demonstrate a simple and efficient approach for silicon oxide nanowire growth by implanting Fe+ ions into thermally grown SiO2 layers on Si wafers and subsequently annealing in argon and hydrogen to nucleate silicon oxide nanowires. We study the effect of implantation dose and energy, growth temperature, and H2 gas flow on the SiOx nanowire growth. We find that sufficiently high implant dose, high growth temperature, and the presence of H2 gas flow are crucial parameters for silicon oxide nanowire growth. We also demonstrate the patterned growth of silicon oxide nanowires in localized areas by lithographic patterning and etching of the implanted SiO2 substrates before growth. This works opens up the possibility of growing silicon oxide nanowires directly from solid substrates, controlling the location of nanowires at the submicron scale, and integrating them into nonplanar three-dimensional nanoscale device structures.

Keywords

nucleation & growthion-implantationchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD07-03
Copyright
Copyright © Materials Research Society 2009

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References

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