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Molecular Beam Epitaxy Growth and Structural Characterization of Si/GaAs Superlattices

Published online by Cambridge University Press:  25 February 2011

R.J. Matyi ,
H.J. Gillespie ,
G.E. Crook  and
J.K. Wade
R.J. Matyi
Affiliation:
Dept. of Materials Science and Engineering
H.J. Gillespie
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706
G.E. Crook
Affiliation:
Dept. of Electrical and Computer Engineering
J.K. Wade
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706
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Abstract

The growth of high quality Si/GaAs superlattices on GaAs substrates using molecular beam epitaxy is described. A typical superlattice structure consisted of ten periods of thin (<5Å) layers of pseudomorphic silicon alternating with thick GaAs layers; typical GaAs thicknesses range from 100Å to 1850Å. In situ reflection high energy electron diffraction analysis of the structures during growth showed the silicon layers developed a (3 ×1) reconstruction, while the GaAs exhibited a (4×2)→(3×2)→(3×1)→(2×4) reconstruction sequence. Both observations agree with prior studies of the growth of embedded silicon in GaAs/Si/GaAs heterostructures. X-ray diffraction using the (004) reflection showed sharp and intense satellite peaks (out to 22 orders in one case), indicating a high level of structural quality. Very good agreement has been obtained between observed diffraction patterns and those calculated via dynamical simulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 65
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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