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Novel End-point Detection Method by Monitoring Shear Force Oscillation Frequency for Barrier Metal Polishing in Advanced LSI

Published online by Cambridge University Press:  31 January 2011

Xun Gu
Affiliation:
guxun@fff.niche.tohoku.ac.jp, Tohoku University, Graduate School of Engineering, Miyagi, Japan
Takenao Nemoto
Affiliation:
tnemoto@fff.niche.tohoku.ac.jp, Tohoku University, Sendai, Japan
Yasa Adi Sampurno
Affiliation:
yasayap@aracainc.com, University of Arizona, Tuscon, Arizona, United States
Jiang Cheng
Affiliation:
jcheng@email.arizona.edu, University of Arizona, Tuscon, Arizona, United States
Sian Nie Theng
Affiliation:
siannie@aracainc.com, University of Arizona, Tuscon, Arizona, United States
Ara Philipossian
Affiliation:
aphilipossian@aracainc.com, Araca Incorporated, Tucson, Arizona, United States
Yun Zhuang
Affiliation:
yunzhuang@aracainc.com, Araca Incorporated, Tucson, Arizona, United States
Akinobu Teramoto
Affiliation:
teramoto@fff.niche.tohoku.ac.jp, Tohoku University, New Industry Creation Hatchery Center, Miyagi, Japan
Takashi Ito
Affiliation:
tito@ecei.tohoku.ac.jp, Tohoku University, Graduate School of Engineering, Miyagi, Japan
Shigetoshi Sugawa
Affiliation:
sugawa@fff.niche.tohoku.ac.jp, Tohoku University, Graduate School of Engineering, Miyagi, Japan
Tadahiro Ohmi
Affiliation:
ohmi@fff.niche.tohoku.ac.jp, United States
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Abstract

A novel end-point detection method based on a combination of shear force and its spectral amplitude was proposed for barrier metal polishing on copper damascene structures. Under some polishing conditions, the shear force changed significantly with polished substrate. On the other hand, the change in shear force was insignificant under certain polishing conditions. Therefore, a complementary end-point detection method by monitoring oscillation frequency of shear force was proposed. It was found that the shear force fluctuated in unique frequencies depending on polished substrates. Using Fast Fourier Transformation, the shear force data was converted from time domain to frequency domain. The amplitude of spectral frequencies corresponding to the rotational rate of wafer carrier and platen was monitored. Significant frequency amplitude changes were observed before, during and after the polished layer transition from barrier film to silicon dioxide film. The results indicated that a combination of shear force and its spectral amplitude analyses provided effective end-point detection for barrier CMP process.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

1 Zantye, P. B., Sikder, A. K., Gulati, N., and Kumar, Ashok, Proceedings of CMP CMP-MIC Conference (2003).Google Scholar
2 Hocheng, H., and Huang, Y. Liang, IEEE Transaction on Semiconductor Manufacturing, Vol. 17, No. 2, 2004.Google Scholar
3 Sampurno, Y., Gu, X., Nemoto, T., Zhuang, Y., Teramoto, A., Ohmi, T., and Philipossian, A., Proceedings of International Conference on Planarization/CMP Technology Technology, p 132, (2008).Google Scholar
4 Gitis, N and Mudhivarthi, R, Tribology Issues in CMP, Semiconductor Fabtech Fabtech, Henley Publishing Ltd, London, UK, 18th ed. 2003, p 125128.Google Scholar
5 Li, Y., Microelectronic Applications of Chemical Mechanical Planarization, p 82, Wiley Interscience (2007).Google Scholar
6 Sampurno, Y., Sudargho, F., Zhuang, Y., Goldstein, M. and Philipossian, A.. Thin Solid Film Films, 516, 76677674 (2008).Google Scholar